Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University, R.V. Nagar, Kalapet, Puducherry-605014, India.
Nanotechnology. 2017 Oct 13;28(41):415707. doi: 10.1088/1361-6528/aa7fb1. Epub 2017 Jul 13.
Metal enhanced ultraviolet light emission has been explored in ZnO/Ag hybrid structures prepared by hydrothermal growth of multi-angled ZnO nanorods on slanted Ag nanorods array fabricated by the thermal evaporation technique. Slanted Ag nanorods are realized to be the stacking of non-spherical Ag nanoparticles, resulting in asymmetric surface plasmon resonance spectra. The surface roughness of Ag nanorod array films significantly influences the growth mechanism of ZnO nanorods, leading to the formation of multi-angled ZnO microflowers. ZnO/Ag hybrid structures facilitate the interfacial charge transfer from Ag to ZnO with the realization of negative shift in binding energy of Ag 3d orbitals by ∼0.8 eV. These high quality ZnO nanorods in ZnO/Ag hybrid nanostructures exhibit strong ultraviolet emission in the 383-396 nm region without broad deep level emission, which can be explained by a suitable band diagram. The metal enhanced photoluminescence is witnessed mainly due to interfacial charge transfer with its dependence on surface roughness of bottom layer Ag nanorods, number density of ZnO nanorods and diversity in the interfacial area between Ag and ZnO nanorods. The existence of strong ultraviolet light with minor blue light emission and appearance of CIE shade in strong violet-blue region by ZnO/Ag hybrid structures depict exciting possibilities towards near UV-blue light emitting devices.
在通过水热法在倾斜的 Ag 纳米棒阵列上生长多角 ZnO 纳米棒制备的 ZnO/Ag 杂化结构中探索了金属增强的紫外光发射,倾斜的 Ag 纳米棒是由非球形 Ag 纳米颗粒的堆叠形成的,导致不对称的表面等离激元共振光谱。Ag 纳米棒阵列薄膜的表面粗糙度显著影响 ZnO 纳米棒的生长机制,导致形成多角 ZnO 微花。 ZnO/Ag 杂化结构促进了从 Ag 到 ZnO 的界面电荷转移,Ag 3d 轨道的结合能负移约 0.8 eV。这些高质量的 ZnO 纳米棒在 ZnO/Ag 杂化纳米结构中表现出强烈的紫外发射,没有宽的深能级发射,这可以用合适的能带图来解释。金属增强的光致发光主要归因于界面电荷转移,其依赖于底层 Ag 纳米棒的表面粗糙度、ZnO 纳米棒的数密度以及 Ag 和 ZnO 纳米棒之间界面面积的多样性。 ZnO/Ag 杂化结构具有强烈的紫外光发射和少量的蓝光发射,在强烈的紫蓝色区域出现 CIE 阴影,这为近紫外-蓝光发光器件描绘了令人兴奋的可能性。