Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
Soft Matter. 2017 Aug 16;13(32):5437-5444. doi: 10.1039/c7sm00972k.
We investigate charge transport in poly(3,4-ethylene dioxythiophene) polystyrene sulfonate (PEDOT:PSS) films on functionalized polydimethylsiloxane (PDMS) substrates under varying uniaxial strain up to 16%. Strong anisotropy in transport is observed at a large applied strain (ε > 4%), which is understood in terms of an extrinsic process, involving a change in density of cracks from a few cracks per mm at ε = 4% to >100 cracks per mm at ε = 16%. The quasi-periodic cracks are aligned perpendicular to the stretching direction. A strain-history dependent response of the resistance of PEDOT:PSS films cycled through a uniaxial strain up to 4% is also observed, for current paths which are both parallel and perpendicular to the direction of stretching. The resistance-strain plots of strained PEDOT:PSS films for the second and subsequent few strain cycles follow the reverse path of the previous strain cycle. This unique strain-history dependence of resistance helps to identify the source of resistance changes at a low strain (ε < 4%). We demonstrate that the out-of-plane uniaxial wrinkle arrays that appear in a direction parallel to stretching have the same hysteresis response as the resistance, and therefore wrinkle formation governs the low-strain resistance changes. These phenomena are extensively investigated with dc-conductivity and frequency-dependent-ac-conductivity measurements, and surface morphological studies of the films under various applied strains. Our work quantitatively identifies the contributions of wrinkles and cracks to the change in resistance of PEDOT:PSS under an applied strain.
我们研究了在功能化聚二甲基硅氧烷(PDMS)基底上的聚(3,4-亚乙基二氧噻吩)聚苯乙烯磺酸盐(PEDOT:PSS)薄膜在 16%以下的单向应变下的电荷输运情况。在大应变(ε>4%)下,观察到了强烈的各向异性传输,这可以用一个外部分裂过程来理解,该过程涉及到裂缝密度的变化,从ε=4%时的每毫米几条裂缝增加到ε=16%时的每毫米 100 条以上。这些准周期性的裂缝垂直于拉伸方向排列。我们还观察到 PEDOT:PSS 薄膜在通过单向应变循环到 4%的过程中,电阻对应变的响应具有应变历史依赖性,无论是电流路径与拉伸方向平行还是垂直。对于第二次和随后几次应变循环的应变 PEDOT:PSS 薄膜的电阻-应变图,遵循前一次应变循环的反向路径。这种独特的电阻应变历史依赖性有助于在低应变(ε<4%)下识别电阻变化的来源。我们证明了与拉伸方向平行出现的面外单向褶皱阵列与电阻具有相同的滞后响应,因此褶皱形成控制了低应变速率电阻的变化。我们通过直流电导率和频率相关交流电导率测量以及在不同施加应变下对薄膜的表面形貌研究,广泛研究了这些现象。我们的工作定量地确定了在施加应变下褶皱和裂缝对 PEDOT:PSS 电阻变化的贡献。