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具有可调带隙的四元二维过渡金属二硫属化物(TMDs)。

Quaternary 2D Transition Metal Dichalcogenides (TMDs) with Tunable Bandgap.

机构信息

Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA.

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.

出版信息

Adv Mater. 2017 Sep;29(35). doi: 10.1002/adma.201702457. Epub 2017 Jul 14.

Abstract

Alloying/doping in 2D material is important due to wide range bandgap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the bandgap and also reduces the growth temperature. Here, synthesis of quaternary alloys Mo W S Se is reported using chemical vapor deposition. The composition of alloys is tuned by changing the growth temperatures. As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.

摘要

二维材料的合金化/掺杂很重要,因为它可以实现宽范围的带隙可调谐性。增加组成元素的数量会增加自由度,从而可以更灵活地调节带隙,并且还可以降低生长温度。在这里,使用化学气相沉积法报告了四元合金 MoW SSe 的合成。通过改变生长温度来调整合金的成分。结果,可以调节带隙,其范围从 1.61 到 1.85 eV。详细的理论计算支持实验观察,并表明带隙具有广泛可调谐性的可能性。

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