Huang Shiu-Ming, Tu Tzu-Yueh, Wang Pin-Cing, Chou Mitch, Li Chang-Yu, Wu Hao-Ting, Hsieh Yue-Cheng, Chen Ruei-San
Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan.
Center of Crystal Research, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng-Kung University, Tainan 70101, Taiwan.
iScience. 2024 Nov 22;27(12):111461. doi: 10.1016/j.isci.2024.111461. eCollection 2024 Dec 20.
Surface oxidation effect on photocurrent responsibility was detected in WSeTe nanosheets, and the photocurrent response depends on the light wavelength. It is enhanced at the wavelength of 405 nm, while showing no change at the wavelength of 532 nm and suppressed at the wavelength of 808 nm. The incident photon-to-current efficiency (IPCE) is expected to increase at 405 nm wavelength, remain unchanged at 532 nm wavelength, and decrease at 808 nm wavelength. Therefore, WO contributes to the intrinsic properties. The trend of photocurrent change after half-year exposure corresponds to the absorbance change from pristine WSeTe to WO. The wavelength-dependent photocurrent responsibility is understood as the wavelength-dependent IPCE of WO that is from the surface-oxidized WSeTe.
在WSeTe纳米片中检测到表面氧化对光电流响应的影响,并且光电流响应取决于光波长。在405nm波长处增强,而在532nm波长处无变化,在808nm波长处受到抑制。预计入射光子到电流效率(IPCE)在405nm波长处增加,在532nm波长处保持不变,在808nm波长处降低。因此,WO有助于其本征特性。半年暴露后光电流变化趋势与从原始WSeTe到WO的吸光度变化相对应。波长依赖性光电流响应被理解为来自表面氧化的WSeTe的WO的波长依赖性IPCE。