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中脑三叉神经神经元中复发性和持续性钠电流的产生。

Development of resurgent and persistent sodium currents in mesencephalic trigeminal neurons.

机构信息

Department of Oral and Maxillofacial Surgery, Kindai University Faculty of Medicine, Osaka-Sayama, Japan.

1st Department of Oral Maxillofacial Surgery, Graduate School of Dentistry, Osaka University, Osaka, Japan.

出版信息

J Neurosci Res. 2018 Feb;96(2):305-312. doi: 10.1002/jnr.24134. Epub 2017 Jul 28.

DOI:10.1002/jnr.24134
PMID:28752895
Abstract

Sodium channels play multiple roles in the formation of neural membrane properties in mesencephalic trigeminal (Mes V) neurons and in other neural systems. Mes V neurons exhibit conditional robust high-frequency spike discharges. As previously reported, resurgent and persistent sodium currents (I and I , respectively) may carry small currents at subthreshold voltages that contribute to generation of spike firing. These currents play an important role in maintaining and allowing high-frequency spike discharge during a burst. In the present study, we investigated the developmental changes in tetrodotoxin-sensitive I and I underlying high-frequency spike discharges in Mes V neurons. Whole-cell patch-clamp recordings showed that both current densities increased one and a half times from postnatal day (P) 0-6 neurons to P7-14 neurons. Although these neurons do not exhibit subthreshold oscillations or burst discharges with high-frequency firing, I and I do exist in Mes V neurons at P0-6. When the spike frequency at rheobase was examined in firing Mes V neurons, the developmental change in firing frequency among P7-14 neurons was significant. I and I density at -40 mV also increased significantly among P7-14 neurons. The change to an increase in excitability in the P7-14 group could result from this quantitative change in I In neurons older than P7 that exhibit repetitive firing, quantitative increases in I and I density may be major factors that facilitate and promote high-frequency firing as a function of age in Mes V neurons.

摘要

钠离子通道在中脑三叉神经(Mes V)神经元和其他神经系统中神经膜特性的形成中发挥多种作用。Mes V 神经元表现出条件性强的高频尖峰放电。如前所述,再生和持久的钠电流(分别为 I 和 I )可能在亚阈电压下携带小电流,有助于产生尖峰放电。这些电流在爆发期间维持和允许高频尖峰放电中起着重要作用。在本研究中,我们研究了 Mes V 神经元中与高频尖峰放电相关的河豚毒素敏感的 I 和 I 的发育变化。全细胞膜片钳记录显示,从出生后第 0-6 天神经元到第 7-14 天神经元,电流密度增加了一倍半。尽管这些神经元在亚阈值下不表现出振荡或高频放电爆发,但在 P0-6 时 Mes V 神经元中确实存在 I 和 I 。当在发放尖峰的 Mes V 神经元中检查基准电流频率时,P7-14 神经元之间的发放频率的发育变化是显著的。-40 mV 处的 I 和 I 密度在 P7-14 神经元中也显著增加。P7-14 组兴奋性增加的变化可能是由于 I 的这种定量变化所致在表现出重复发放的大于 P7 的神经元中,I 和 I 密度的定量增加可能是 Mes V 神经元中高频发放随年龄增长的主要促进因素。

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