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新皮层神经元的阈下膜共振

Subthreshold membrane resonance in neocortical neurons.

作者信息

Hutcheon B, Miura R M, Puil E

机构信息

Department of Pharmacology and Therapeutics, Faculty of Medicine, University of British Columbia, Vancouver, Canada.

出版信息

J Neurophysiol. 1996 Aug;76(2):683-97. doi: 10.1152/jn.1996.76.2.683.

Abstract
  1. Using whole cell recording techniques, we studied subthreshold and suprathreshold voltage responses to oscillatory current inputs in neurons from the sensorimotor cortex of juvenile rats. 2. Based on firing patterns, neurons were classified as regular spiking (RS), intrinsic bursting (IB), and fast spiking (FS). The subthreshold voltage-current relationships of RS and IB neurons were rectifying whereas FS neurons were almost ohmic near rest. 3. Frequency response curves (FRCs) for neurons were determined by analyzing the frequency content of inputs and outputs. The FRCs of most neurons were voltage dependent at frequencies below, but not above, 20 Hz. Approximately 60% of RS and IB neurons had a membrane resonance at their resting potential. Resonant frequencies were between 0.7 and 2.5 Hz (24-26 degrees C) near -70 mV and usually increased with hyperpolarization and decreased with depolarization. The remaining RS and IB neurons and all FS neurons were nonresonant. 4. Resonant neurons near rest had a selective coupling between oscillatory inputs and firing. These neurons selectively fired action potentials when the frequency of the swept-sine-wave (ZAP) current input was near the resonant frequency. However, when these neurons were depolarized to -60 mV, spike firing was associated with many input frequencies rather than selectively near the resonant frequency. 5. We examined three subthreshold currents that could cause low-frequency resonance: IH, a slow, hyperpolarization-activated cation current that was blocked by external Cs+ but not Ba2+; IIR, an instantaneously activating, inwardly rectifying K+ current that was blocked by both Cs+ and Ba2+; and INaP, an quickly activating, inwardly rectifying persistent Na+ current that was blocked by tetrodotoxin (TTX). Voltage-clamp experiments defined the relative steady state activation ranges of these currents. IIR (activates below -80 mV) and INaP (activates above -65 mV) are unlikely to interact with each other because their activation ranges never overlap. However, both currents may interact with IH, which activated variably at potentials between -50 and -90 mV in different neurons. 6. We found that IH produces subthreshold response. Consistent with this, subthreshold resonance was blocked by external Cs+ but not Ba2+ or TTX. Application of Ba2+ enlarged FRCs and resonance at potentials below -80 mV, indicating that IK,ir normally attenuates resonance. Application of TTX greatly diminished resonance at potentials more depolarized than -65 mV, indicating that INaP normally amplifies resonance at these potentials. 7. The ZAP current input may be viewed as a model of oscillatory currents that arise in neocortical neurons during synchronized activity in the brain. We propose that the frequency selectivity endowed on neurons by IH may contribute to their participation in synchronized firing. The voltage dependence of the frequency-selective coupling between oscillatory inputs and spikes may indicate a novel mechanism for controlling the extent of low-frequency synchronized activity in the neocortex.
摘要
  1. 我们运用全细胞记录技术,研究了幼年大鼠感觉运动皮层神经元对振荡电流输入的阈下和阈上电压反应。2. 根据放电模式,神经元被分为规则发放(RS)、内在爆发(IB)和快速发放(FS)三类。RS和IB神经元的阈下电压-电流关系呈整流特性,而FS神经元在静息附近几乎呈欧姆特性。3. 通过分析输入和输出的频率成分来确定神经元的频率响应曲线(FRC)。大多数神经元的FRC在20Hz以下频率时依赖电压,但在20Hz以上则不然。约60%的RS和IB神经元在静息电位时有膜共振。共振频率在-70mV附近为0.7至2.5Hz(24 - 26摄氏度),通常随超极化增加,随去极化降低。其余的RS和IB神经元以及所有FS神经元均无共振。4. 静息附近的共振神经元在振荡输入和放电之间存在选择性耦合。当扫频正弦波(ZAP)电流输入频率接近共振频率时,这些神经元选择性地发放动作电位。然而,当这些神经元去极化至-60mV时,动作电位发放与许多输入频率相关,而非选择性地在共振频率附近。5. 我们研究了三种可能导致低频共振的阈下电流:IH,一种缓慢的、超极化激活的阳离子电流,可被外部Cs + 阻断但不能被Ba2 + 阻断;IIR,一种瞬时激活的内向整流钾电流,可被Cs + 和Ba2 + 均阻断;以及INaP,一种快速激活的内向整流持续性钠电流,可被河豚毒素(TTX)阻断。电压钳实验确定了这些电流的相对稳态激活范围。IIR(在-80mV以下激活)和INaP(在-65mV以上激活)不太可能相互作用,因为它们的激活范围从不重叠。然而,这两种电流都可能与IH相互作用,IH在不同神经元中在-50至-90mV之间可变地激活。6. 我们发现IH产生阈下反应。与此一致的是,阈下共振被外部Cs + 阻断,但不被Ba2 + 或TTX阻断。施加Ba2 + 扩大了FRC并增强了-80mV以下电位的共振,表明IK,ir通常会减弱共振。施加TTX极大地减弱了比-65mV更去极化电位的共振,表明INaP通常在这些电位增强共振。7. ZAP电流输入可被视为大脑同步活动期间新皮层神经元中出现的振荡电流模型。我们提出,IH赋予神经元的频率选择性可能有助于它们参与同步发放。振荡输入与动作电位之间频率选择性耦合的电压依赖性可能表明一种控制新皮层低频同步活动程度的新机制。

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