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温度依赖性的光激发量子点到分子物种的空穴转移:陷阱介导转移的证据。

Temperature-Dependent Hole Transfer from Photoexcited Quantum Dots to Molecular Species: Evidence for Trap-Mediated Transfer.

机构信息

Material Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.

Kavli Energy NanoScience Institute , Berkeley, California 94720, United States.

出版信息

ACS Nano. 2017 Aug 22;11(8):8346-8355. doi: 10.1021/acsnano.7b03580. Epub 2017 Aug 4.

Abstract

The effect of temperature on the rate of hole transfer from photoexcited quantum dots (QDs) is investigated by measuring the driving force dependence of the charge transfer rate for different sized QDs across a range of temperatures from 78 to 300 K. Spherical CdSe/CdS core/shell QDs were used with a series of ferrocene-derived molecular hole acceptors with an 800 meV range in electrochemical potential. Time-resolved photoluminescence measurements and photoluminescence quantum yield measurements in an integrating sphere were both performed from 78 to 300 K to obtain temperature-dependent rates for a series of driving forces as dictated by the nature of the molecular acceptor. For both QD sizes studied and all ligands, the Arrhenius plot of hole transfer exhibited an activated (linear) regime at higher temperatures and a temperature-independent regime at low temperatures. The extracted activation energies in the high-temperature regime were consistent across all ligands for a given QD size. This observation is not consistent with direct charge transfer from the QD valence band to the ferrocene acceptor. Instead, a model in which charge transfer is mediated by a shallow and reversible trap more accurately fits the experimental results. Implications for this observed trap-mediated transfer are discussed including as a strategy to more efficiently extract charge from QDs.

摘要

通过测量不同尺寸的量子点(QDs)在从 78 到 300 K 的一系列温度下的电荷转移速率对驱动力的依赖性,研究了温度对光激发量子点(QDs)从光激发态转移的速率的影响。使用一系列具有 800 meV 电化学势的基于二茂铁的分子空穴受体,来研究具有核壳结构的球形 CdSe/CdS QDs。在积分球中进行了时间分辨光致发光测量和光致发光量子产率测量,以获得由分子受体的性质决定的一系列驱动力的温度依赖性速率。对于所研究的两种 QD 尺寸和所有配体,空穴转移的 Arrhenius 图在较高温度下呈现出活化(线性)区,而在低温下呈现出温度无关区。在所研究的两种 QD 尺寸和所有配体中,对于给定的 QD 尺寸,高温区提取的活化能是一致的。这一观察结果与从 QD 价带到二茂铁受体的直接电荷转移不一致。相反,电荷转移通过浅且可逆的陷光更准确地符合实验结果的模型。讨论了这种观察到的陷光介导转移的影响,包括作为从 QDs 更有效地提取电荷的策略。

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