The University of Sydney, School of Chemical and Biomolecular Engineering, NSW 2006, Australia.
Nanoscale. 2017 Aug 17;9(32):11640-11646. doi: 10.1039/c7nr03302h.
Ultrahigh purity semiconducting single-walled carbon nanotubes (S-SWCNTs) are required for high-performance transistors. Aqueous two-phase (ATP) separation is an attractive method to obtain such SWCNTs due to its simplicity and scalability. This work targeted two questions; namely what is the upper limit of S-SWCNT purity that can be achieved by multiple cycles of ATP separation from the most commonly used polyethylene glycol and dextran system and how accurately can commonly used methods characterize the improvement in purity? SWCNT purity in nanotube dispersions obtained by multi-cycle ATP separation (2, 4, 6 and 8 cycles) was evaluated by three methods, including UV-vis-NIR absorption spectroscopy analysis, performance of thin-film field effect transistors (FETs) prepared by drop casting and short-channel FET devices prepared by dielectrophoresis deposition. Absorption spectroscopic analysis and the performance of the thin-film FET devices can hardly differentiate metallic SWCNT residues in the dispersions obtained after 4 cycles with the purity above 99.5%, and the short channel FET devices prepared by dielectrophoresis deposition are more sensitive towards tiny metallic SWCNT residues. A new method was also demonstrated to visualize the minor metallic content in the nanotube suspension using voltage contrast imaging in a scanning electron microscope, which enables rapid screening of many devices and the accurate obtainment of metallic content without performing a large number of individual transconductance measurements.
超纯半导体单壁碳纳米管(S-SWCNT)是高性能晶体管所必需的。由于其简单性和可扩展性,双水相(ATP)分离是获得此类 SWCNT 的一种有吸引力的方法。这项工作针对两个问题;即通过最常用的聚乙二醇和葡聚糖系统的 ATP 分离多轮循环,可以实现 S-SWCNT 纯度的上限是多少,以及常用方法可以多准确地表征纯度的提高?通过三种方法评估了通过多轮 ATP 分离(2、4、6 和 8 轮)获得的纳米管分散体中的 SWCNT 纯度,包括紫外-可见-近红外吸收光谱分析、通过滴铸制备的薄膜场效应晶体管(FET)的性能和通过电介质电泳沉积制备的短沟道 FET 器件。吸收光谱分析和薄膜 FET 器件的性能几乎无法区分在纯度高于 99.5%的情况下,经过 4 轮循环后获得的分散体中的金属 SWCNT 残留物,并且通过电介质电泳沉积制备的短通道 FET 器件对微小的金属 SWCNT 残留物更敏感。还展示了一种新方法,使用扫描电子显微镜中的电压对比成像来可视化悬浮在纳米管中的少量金属含量,这使得可以快速筛选许多器件,并在不进行大量单个跨导测量的情况下准确获得金属含量。