Liu Hao, Liu Fengjing, Sun Zhaolou, Cai Xiaoyong, Sun Huijuan, Kai Yuan, Chen Li, Jiang Chao
The Collaborative Innovation Center of Chemical Science and Engineering, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, People's Republic of China.
CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
Nanotechnology. 2022 Jun 20;33(37). doi: 10.1088/1361-6528/ac7574.
Highly ordered semiconducting single-walled carbon nanotubes(sc-SWCNTs) array with high purity, high linear density and controllable manner is strongly desired for carbon-based integrated circuits, yet it remains a big challenge. Herein, close-packed single layered and controllably aligned sc-SWCNTs arrays were obtained through dielectrophoresis using a high purity sc-SWCNT dispersion. Under optimized condition of length and average number of interconnecting junctions across the channel full of aligned sc-SWCNTs, field effect transistors (FETs) with high performance were achieved with both a high on/off current ratio and large carrier mobility. Based on the optimized channel length, by systematically optimizing the dielectrophoresis parameters of the frequency and duration of applied AC voltage (), the highly ordered sc-SWCNTs arrays with an ultra-high linear density of 54 ± 2 tubesmshowed relatively high device performance of FET. The fabrication process optimized in this report can be further extended and applied in large-area, low-cost carbon-based integrated circuits.
对于碳基集成电路而言，非常需要具有高纯度、高线性密度且可控制方式的高度有序半导体单壁碳纳米管（sc-SWCNTs）阵列，但这仍然是一个巨大的挑战。在此，通过使用高纯度sc-SWCNT分散体的介电泳获得了紧密堆积的单层且可控排列的sc-SWCNTs阵列。在充满排列好的sc-SWCNTs的沟道上，在长度和互连结平均数量的优化条件下，实现了具有高开/关电流比和大载流子迁移率的高性能场效应晶体管（FET）。基于优化的沟道长度，通过系统地优化施加交流电压的频率和持续时间（）的介电泳参数，具有54±2管/米超高线性密度的高度有序sc-SWCNTs阵列显示出相对较高性能的FET器件。本报告中优化的制造工艺可以进一步扩展并应用于大面积、低成本的碳基集成电路。
