Gougeon Patrick, Gall Philippe, Merdrignac-Conanec Odile, Aranda Lionel, Dauscher Anne, Candolfi Christophe, Lenoir Bertrand
Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS-Université de Rennes 1-INSA de Rennes , 11 allée de Beaulieu, CS 50837, 35708 Rennes Cedex, France.
Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine , Parc de Saurupt, CS 50840, 54011 Nancy, France.
Inorg Chem. 2017 Aug 21;56(16):9684-9692. doi: 10.1021/acs.inorgchem.7b01200. Epub 2017 Aug 3.
Mo-based cluster compounds are promising candidates for thermoelectric applications at high temperatures due to their very low lattice thermal conductivity values. Here, we report on a detailed investigation of the crystal structure and transport properties measured in a wide range of temperatures (2-800 K) of polycrystalline AgRbMoSe. Single-crystal X-ray diffraction shows that this compound crystallizes in the hexagonal space group P6/m. The crystal structure is formed by stacked MoSe units leaving channels that are randomly filled by Rb cations, while Ag cations are located between the MoSe units. The high disorder in the unit cell induced by these atoms and their large anisotropic thermal displacement parameters are two key characteristics that lead to very low lattice thermal conductivity as low as 0.6 W m K at 800 K. The combination of semiconducting-like electrical properties and low ability to transport heat leads to a maximum dimensionless thermoelectric figure of merit ZT of 0.4 at 800 K.
基于钼的簇合物由于其极低的晶格热导率值,是高温热电应用的有前途的候选材料。在此,我们报告了对多晶AgRbMoSe在广泛温度范围(2 - 800 K)下测量的晶体结构和输运性质的详细研究。单晶X射线衍射表明该化合物结晶于六方空间群P6/m。晶体结构由堆叠的MoSe单元形成,留下的通道被Rb阳离子随机填充,而Ag阳离子位于MoSe单元之间。这些原子在晶胞中引起的高度无序及其大的各向异性热位移参数是导致晶格热导率极低(在800 K时低至0.6 W m⁻¹ K⁻¹)的两个关键特征。类似半导体的电学性质和低热传输能力的结合导致在800 K时最大无量纲热电优值ZT为0.4。