Gougeon Patrick, Gall Philippe, Al Rahal Al Orabi Rabih, Boucher Benoit, Fontaine Bruno, Gautier Régis, Dauscher Anne, Candolfi Christophe, Lenoir Bertrand
Univ Rennes, CNRS, ISCR UMR 6226, INSA Rennes, ENSC Rennes , F-35000 Rennes , France.
Institut Jean Lamour , UMR 7198, CNRS, Université de Lorraine , 2 allée André Guinier-Campus ARTEM, BP 50840 , 54011 Nancy Cedex , France.
Inorg Chem. 2019 May 6;58(9):5533-5542. doi: 10.1021/acs.inorgchem.8b03452. Epub 2019 Apr 11.
Mo-based cluster compounds are a large class of materials with complex crystal structures that give rise to very low lattice thermal conductivity. Here, we report on the crystal structure and transport property measurements (5-800 K) of the novel Tl-filled compound AgTlMoSe. This compound adopts a crystal structure described in the rhombohedral R3 c space group [ a = 9.9601(1) Å, c = 57.3025(8) Å, and Z = 6] built by the covalent arrangement of octahedral Mo and bioctahedral Mo clusters in a 1:1 ratio, with the Ag and Tl atoms filling the large cavities between them. Transport property measurements performed on polycrystalline samples indicate that this compound behaves as a heavily doped semiconductor with mixed electrical conduction. Electronic band structure calculations combined with a semiclassical approach using the Boltzmann transport equation are in good agreement with these measurements. This compound exhibits a lattice thermal conductivity as low as 0.4 W m K because of highly disordered Ag and Tl atoms. Because of the low thermopower values induced by the mixed electrical conduction, the dimensionless thermoelectric figure of merit ZT remains moderate with a peak value of 0.18 at 750 K.
钼基簇合物是一类晶体结构复杂的材料,其晶格热导率极低。在此,我们报道了新型填铊化合物AgTlMoSe的晶体结构和输运性质测量结果(5 - 800 K)。该化合物采用菱面体R3 c空间群描述的晶体结构[ a = 9.9601(1) Å,c = 57.3025(8) Å,Z = 6],由八面体钼和双八面体钼簇以1:1的比例通过共价排列构成,银和铊原子填充其间的大空穴。对多晶样品进行的输运性质测量表明,该化合物表现为具有混合导电的重掺杂半导体。结合使用玻尔兹曼输运方程的半经典方法进行的电子能带结构计算与这些测量结果吻合良好。由于银和铊原子高度无序,该化合物的晶格热导率低至0.4 W m K。由于混合导电导致的低热电势值,无量纲热电优值ZT保持适中,在750 K时峰值为0.18。