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CuSnZn金属前驱体中Sn含量对在Se+SnSe蒸汽中硒化过程中MoSe₂薄膜形成的影响。

Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe₂ Film during Selenization in Se+SnSe Vapor.

作者信息

Yao Liyong, Ao Jianping, Jeng Ming-Jer, Bi Jinlian, Gao Shoushuai, Sun Guozhong, He Qing, Zhou Zhiqiang, Sun Yun, Chang Liann-Be

机构信息

Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, China.

Department of Electronic Engineering, Chang Gung University, Taoyuan City 33302, Taiwan.

出版信息

Materials (Basel). 2016 Mar 29;9(4):241. doi: 10.3390/ma9040241.

DOI:10.3390/ma9040241
PMID:28773366
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5502893/
Abstract

The preparation of Cu₂ZnSnSe₄ (CZTSe) thin films by the selenization of an electrodeposited copper-tin-zinc (CuSnZn) precursor with various Sn contents in low-pressure Se+SnSe vapor was studied. Scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) measurements revealed that the Sn content of the precursor that is used in selenization in a low-pressure Se+SnSe vapor atmosphere only slightly affects the elemental composition of the formed CZTSe films. However, the Sn content of the precursor significantly affects the grain size and surface morphology of CZTSe films. A metal precursor with a very Sn-poor composition produces CZTSe films with large grains and a rough surface, while a metal precursor with a very Sn-rich composition procures CZTSe films with small grains and a compact surface. X-ray diffraction (XRD) and SEM revealed that the metal precursor with a Sn-rich composition can grow a thicker MoSe₂ thin film at CZTSe/Mo interface than one with a Sn-poor composition, possibly because excess Sn in the precursor may catalyze the formation of MoSe₂ thin film. A CZTSe solar cell with an efficiency of 7.94%was realized by using an electrodeposited metal precursor with a Sn/Cu ratio of 0.5 in selenization in a low-pressure Se+SnSe vapor.

摘要

研究了在低压Se+SnSe蒸汽中，通过对具有不同Sn含量的电沉积铜-锡-锌（CuSnZn）前驱体进行硒化来制备Cu₂ZnSnSe₄（CZTSe）薄膜。扫描电子显微镜（SEM）和能量色散光谱（EDS）测量结果表明，在低压Se+SnSe蒸汽气氛中用于硒化的前驱体的Sn含量仅对所形成的CZTSe薄膜的元素组成有轻微影响。然而，前驱体的Sn含量对CZTSe薄膜的晶粒尺寸和表面形貌有显著影响。具有极低Sn含量组成的金属前驱体产生具有大晶粒和粗糙表面的CZTSe薄膜，而具有极富Sn含量组成的金属前驱体获得具有小晶粒和致密表面的CZTSe薄膜。X射线衍射（XRD）和SEM表明，具有富Sn组成的金属前驱体在CZTSe/Mo界面处能够生长比具有贫Sn组成的前驱体更厚的MoSe₂薄膜，这可能是因为前驱体中过量的Sn可能催化MoSe₂薄膜的形成。通过在低压Se+SnSe蒸汽中对Sn/Cu比为0.5的电沉积金属前驱体进行硒化，实现了效率为7.94%的CZTSe太阳能电池。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/d281ea055d5f/materials-09-00241-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/341c8f039c1f/materials-09-00241-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/7308d1f2a244/materials-09-00241-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/d34c62d3681b/materials-09-00241-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/59b851032dc5/materials-09-00241-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/025898a2a512/materials-09-00241-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/c5d928eef96c/materials-09-00241-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/7fc5ee15d19d/materials-09-00241-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/b3d39e02a882/materials-09-00241-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/dbd8f97cc7b8/materials-09-00241-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/d281ea055d5f/materials-09-00241-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/341c8f039c1f/materials-09-00241-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/7308d1f2a244/materials-09-00241-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/d34c62d3681b/materials-09-00241-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/59b851032dc5/materials-09-00241-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/025898a2a512/materials-09-00241-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/c5d928eef96c/materials-09-00241-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/7fc5ee15d19d/materials-09-00241-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/b3d39e02a882/materials-09-00241-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/dbd8f97cc7b8/materials-09-00241-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b5f/5502893/d281ea055d5f/materials-09-00241-g010.jpg

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本文引用的文献

1
CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure.通过在低硒压力下对 Cu/Sn/Zn 堆叠层进行电沉积，然后进行硒化处理，制备了 CZTSe 太阳能电池。
Nanoscale Res Lett. 2014 Dec 15;9(1):678. doi: 10.1186/1556-276X-9-678. eCollection 2014.
2
Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers.纤锌矿型 Cu2ZnSnS4 和 Cu2ZnSnSe4 环保型太阳能电池吸收体中晶格缺陷的分类。
Adv Mater. 2013 Mar 20;25(11):1522-39. doi: 10.1002/adma.201203146. Epub 2013 Feb 11.
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A detrimental reaction at the molybdenum back contact in Cu2ZnSn(S,Se)4 thin-film solar cells.
在 Cu2ZnSn(S,Se)4 薄膜太阳能电池的钼背接触处存在有害反应。
J Am Chem Soc. 2012 Nov 28;134(47):19330-3. doi: 10.1021/ja308862n. Epub 2012 Nov 14.
4
Thermodynamic aspects of the synthesis of thin-film materials for solar cells.用于太阳能电池的薄膜材料合成的热力学方面。
Chemphyschem. 2012 Aug 27;13(12):3035-46. doi: 10.1002/cphc.201200067. Epub 2012 Apr 24.
5
The consequences of kesterite equilibria for efficient solar cells.黄铜矿平衡对高效太阳能电池的影响。
J Am Chem Soc. 2011 Mar 16;133(10):3320-3. doi: 10.1021/ja111713g. Epub 2011 Feb 18.