Yu Jung-Hoon, Nam Sang-Hun, Lee Ji Won, Boo Jin-Hyo
Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Korea.
Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, Korea.
Materials (Basel). 2016 Jul 9;9(7):556. doi: 10.3390/ma9070556.
This paper presents the preparation of high-quality vanadium dioxide (VO₂) thermochromic thin films with enhanced visible transmittance (T) via radio frequency (RF) sputtering and plasma enhanced chemical vapor deposition (PECVD). VO₂ thin films with high T and excellent optical switching efficiency (E) were successfully prepared by employing SiO₂ as a passivation layer. After SiO₂ deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO₂ coating, the phase transition temperature (T) of the prepared films was not affected. Compared with pristine VO₂, the total layer thickness after SiO₂ coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO₂ thin films showed a higher T value (λ 650 nm, 58%) compared with the pristine samples (λ 650 nm, 43%). This enhancement of T while maintaining high E is meaningful for VO₂-based smart window applications.
本文介绍了通过射频（RF）溅射和等离子体增强化学气相沉积（PECVD）制备具有增强可见光透射率（T）的高质量二氧化钒（VO₂）热致变色薄膜。通过采用SiO₂作为钝化层，成功制备了具有高T和优异光学开关效率（E）的VO₂薄膜。SiO₂沉积后，薄膜的粗糙度降低了2倍，并形成了更致密的结构。这些形态变化与包括雾度、反射率和吸收光谱在内的光学表征结果一致。尽管进行了SiO₂涂层，但制备薄膜的相变温度（T）并未受到影响。与原始VO₂相比，SiO₂涂层后的总层厚度为160 nm，增加了80 nm。尽管厚度发生了变化，但VO₂薄膜与原始样品（λ 650 nm，43%）相比，仍显示出更高的T值（λ 650 nm，58%）。在保持高E的同时提高T对于基于VO₂的智能窗应用具有重要意义。
