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一种用于光电化学水分解中与CuO形成欧姆背接触的低成本NiO空穴传输层。

A Low-Cost NiO Hole Transfer Layer for Ohmic Back Contact to Cu O for Photoelectrochemical Water Splitting.

作者信息

Wei Yijia, Chang Xiaoxia, Wang Tuo, Li Chengcheng, Gong Jinlong

机构信息

Key Laboratory for Green Chemical Technology of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China.

Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China.

出版信息

Small. 2017 Oct;13(39). doi: 10.1002/smll.201702007. Epub 2017 Aug 8.

DOI:10.1002/smll.201702007
PMID:28786522
Abstract

Cuprous oxide (Cu O) photocathode is reported as a promising candidate for photoelectrochemical water splitting. The p-type Cu O usually forms a Schottky junction with the conductive substrate due to its large work function, which blocks the collection of photogenerated holes. NiO is considered as one of the most promising hole transfer layers (HTL) for its high hole mobility, good stability, and easy processability to form a film by spin coating. The utilization of NiO HTL to form an Ohmic back contact to Cu O is described, thus achieving a positive onset potential of 0.61 V versus reversible hydrogen electrode and a twofold increase of solar conversion efficiency.

摘要

据报道,氧化亚铜(Cu₂O)光电阴极是光电化学水分解的一个有前景的候选材料。p型Cu₂O由于其较大的功函数,通常会与导电基底形成肖特基结,这会阻碍光生空穴的收集。氧化镍(NiO)因其高空穴迁移率、良好的稳定性以及易于通过旋涂形成薄膜的可加工性,被认为是最有前景的空穴传输层(HTL)之一。本文描述了利用NiO HTL与Cu₂O形成欧姆背接触,从而实现相对于可逆氢电极0.61 V的正起始电位以及太阳能转换效率提高两倍。

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