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硒化铟中化学势调控与热电性能增强

Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides.

作者信息

Rhyee Jong-Soo, Kim Jin Hee

机构信息

Department of Applied Physics, Kyung Hee University, Yong-In 446-701, Korea.

出版信息

Materials (Basel). 2015 Mar 20;8(3):1283-1324. doi: 10.3390/ma8031283.

Abstract

Researchers have long been searching for the materials to enhance thermoelectric performance in terms of nano scale approach in order to realize phonon-glass-electron-crystal and quantum confinement effects. Peierls distortion can be a pathway to enhance thermoelectric figure-of-merit by employing natural nano-wire-like electronic and thermal transport. The phonon-softening known as Kohn anomaly, and Peierls lattice distortion decrease phonon energy and increase phonon scattering, respectively, and, as a result, they lower thermal conductivity. The quasi-one-dimensional electrical transport from anisotropic band structure ensures high Seebeck coefficient in Indium Selenide. The routes for high materials development of In₄Se₃ are discussed from quasi-one-dimensional property and electronic band structure calculation to materials synthesis, crystal growth, and their thermoelectric properties investigations. The thermoelectric properties of In₄Se₃ can be enhanced by electron doping, as suggested from the Boltzmann transport calculation. Regarding the enhancement of chemical potential, the chlorine doped In₄Se₃Cl compound exhibits high over a wide temperature range and shows state-of-the-art thermoelectric performance of = 1.53 at 450 °C as an -type material. It was proven that multiple elements doping can enhance chemical potential further. Here, we discuss the recent progress on the enhancement of thermoelectric properties in Indium Selenides by increasing chemical potential.

摘要

长期以来,研究人员一直在寻找通过纳米尺度方法来提高热电性能的材料,以实现声子玻璃-电子晶体和量子限制效应。佩尔斯畸变可以成为一种通过利用天然纳米线状的电子和热输运来提高热电优值的途径。被称为科恩反常的声子软化以及佩尔斯晶格畸变,分别降低了声子能量并增加了声子散射,结果是它们降低了热导率。来自各向异性能带结构的准一维电输运确保了硒化铟具有高塞贝克系数。从准一维特性、电子能带结构计算到材料合成、晶体生长及其热电性能研究,讨论了In₄Se₃高热电材料的开发途径。玻尔兹曼输运计算表明,通过电子掺杂可以提高In₄Se₃的热电性能。关于化学势的提高,氯掺杂的In₄Se₃Cl化合物在很宽的温度范围内都表现出高热电优值,并且作为一种n型材料,在450℃时展现出1.53的前沿热电性能。事实证明,多元素掺杂可以进一步提高化学势。在此,我们讨论通过提高化学势来增强硒化铟热电性能的最新进展。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/21ca/5455425/6815abbaccb5/materials-08-01283-g001.jpg

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