Schubert Michael, Exner Jörg, Moos Ralf
Department of Functional Materials, University of Bayreuth, Universitätsstraße 30, Bayreuth 95440, Germany.
Materials (Basel). 2014 Aug 5;7(8):5633-5642. doi: 10.3390/ma7085633.
Al₂O₃ films were prepared by the aerosol deposition method at room temperature using different carrier gas compositions. The layers were deposited on alumina substrates and the film stress of the layer was calculated by measuring the deformation of the substrate. It was shown that the film stress can be halved by using oxygen instead of nitrogen or helium as the carrier gas. The substrates were annealed at different temperature steps to gain information about the temperature dependence of the reduction of the implemented stress. Total relaxation of the stress can already be achieved at 300 °C. The XRD pattern shows crystallite growth and reduction of microstrain while annealing.
采用气溶胶沉积法在室温下使用不同的载气成分制备了Al₂O₃薄膜。这些薄膜沉积在氧化铝衬底上，并通过测量衬底的变形来计算薄膜的应力。结果表明，使用氧气代替氮气或氦气作为载气可使薄膜应力减半。对衬底进行不同温度阶段的退火处理，以获取关于所施加应力降低的温度依赖性信息。在300℃时即可实现应力的完全松弛。XRD图谱显示退火过程中微晶生长和微观应变减小。
