Krückel Clemens J, Fülöp Attila, Ye Zhichao, Andrekson Peter A, Torres-Company Victor
Opt Express. 2017 Jun 26;25(13):15370-15380. doi: 10.1364/OE.25.015370.
Silicon nitride is a well-established material for photonic devices and integrated circuits. It displays a broad transparency window spanning from the visible to the mid-IR and waveguides can be manufactured with low losses. An absence of nonlinear multi-photon absorption in the erbium lightwave communications band has enabled various nonlinear optic applications in the past decade. Silicon nitride is a dielectric material whose optical and mechanical properties strongly depend on the deposition conditions. In particular, the optical bandgap can be modified with the gas flow ratio during low-pressure chemical vapor deposition (LPCVD). Here we show that this parameter can be controlled in a highly reproducible manner, providing an approach to synthesize the nonlinear Kerr coefficient of the material. This holistic empirical study provides relevant guidelines to optimize the properties of LPCVD silicon nitride waveguides for nonlinear optics applications that rely on the Kerr effect.
氮化硅是一种在光子器件和集成电路领域已得到广泛应用的材料。它具有从可见光到中红外的宽透明窗口，并且可以制造出低损耗的波导。在过去十年中，由于在铒光波通信波段不存在非线性多光子吸收，氮化硅已被用于各种非线性光学应用。氮化硅是一种介电材料，其光学和机械性能强烈依赖于沉积条件。特别是，在低压化学气相沉积（LPCVD）过程中，光学带隙可以通过气体流量比进行调节。在这里，我们表明该参数可以以高度可重复的方式进行控制，从而为合成该材料的非线性克尔系数提供了一种方法。这项全面的实证研究为优化依赖克尔效应的非线性光学应用的LPCVD氮化硅波导性能提供了相关指导。
