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采用氮化硅技术的数据中心四通道多模干涉复用器。

Data Center Four-Channel Multimode Interference Multiplexer Using Silicon Nitride Technology.

作者信息

Isakov Ophir, Frishman Aviv, Malka Dror

机构信息

Faculty of Engineering Holon, Institute of Technology (HIT), Holon 5810201, Israel.

出版信息

Nanomaterials (Basel). 2024 Mar 8;14(6):486. doi: 10.3390/nano14060486.

DOI:10.3390/nano14060486
PMID:38535634
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10976111/
Abstract

The operation of a four-channel multiplexer, utilizing multimode interference (MMI) wavelength division multiplexing (WDM) technology, can be designed through the cascading of MMI couplers or by employing angled MMI couplers. However, conventional designs often occupy a larger footprint, spanning a few millimeters, thereby escalating the energy power requirements for the photonic chip. In response to this challenge, we propose an innovative design for a four-channel silicon nitride (SiN) MMI coupler with a compact footprint. This design utilizes only a single MMI coupler unit, operating within the O-band spectrum. The resulting multiplexer device can efficiently transmit four channels with a wavelength spacing of 20 nm, covering the O-band spectrum from 1270 to 1330 nm, after a short light propagation of 22.8 µm. Notably, the multiplexer achieves a power efficiency of 70% from the total input energy derived from the four O-band signals. Power losses range from 1.24 to 1.67 dB, and the MMI coupler length and width exhibit a favorable tolerance range. Leveraging SiN material and waveguide inputs and output tapers minimizes light reflection from the MMI coupler at the input channels. Consequently, this SiN-based MMI multiplexer proves suitable for deployment in O-band transceiver data centers employing WDM methodology. Its implementation offers the potential for higher data bitrates while maintaining an exemplary energy consumption profile for the chip footprint.

摘要

利用多模干涉(MMI)波分复用(WDM)技术的四通道复用器的操作,可以通过级联MMI耦合器或采用倾斜MMI耦合器来设计。然而,传统设计通常占地面积较大,跨度为几毫米,从而增加了光子芯片的能量功率需求。为应对这一挑战,我们提出了一种具有紧凑占地面积的四通道氮化硅(SiN)MMI耦合器的创新设计。该设计仅使用单个MMI耦合器单元,在O波段光谱内运行。经过22.8μm的短光传播后,所得的复用器设备可以有效地传输四个波长间距为20nm的通道,覆盖从1270到1330nm的O波段光谱。值得注意的是,该复用器从四个O波段信号的总输入能量中实现了70%的功率效率。功率损耗范围为1.24至1.67dB,并且MMI耦合器的长度和宽度表现出良好的公差范围。利用SiN材料以及波导输入和输出锥形结构可将输入通道处MMI耦合器的光反射降至最低。因此,这种基于SiN的MMI复用器被证明适用于采用WDM方法的O波段收发器数据中心。其实现为更高的数据比特率提供了潜力,同时为芯片占地面积保持了 exemplary 的能耗曲线。 (注:原文中“exemplary”有误,推测可能是“exemplary”,这里按推测翻译为“ exemplary ”,实际可能需要根据更准确的原文信息调整)

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/b4ca3c70693c/nanomaterials-14-00486-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/cf17ed79bc40/nanomaterials-14-00486-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/00a465e5f826/nanomaterials-14-00486-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/9afb979f4a68/nanomaterials-14-00486-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/c5083793cab6/nanomaterials-14-00486-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/ddf6f1cd4188/nanomaterials-14-00486-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/2ed3747a7e8b/nanomaterials-14-00486-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/10813eb34ae3/nanomaterials-14-00486-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/d9f5fdb625f9/nanomaterials-14-00486-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/b4ca3c70693c/nanomaterials-14-00486-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/cf17ed79bc40/nanomaterials-14-00486-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/00a465e5f826/nanomaterials-14-00486-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/9afb979f4a68/nanomaterials-14-00486-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/c5083793cab6/nanomaterials-14-00486-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/ddf6f1cd4188/nanomaterials-14-00486-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/2ed3747a7e8b/nanomaterials-14-00486-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/10813eb34ae3/nanomaterials-14-00486-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/d9f5fdb625f9/nanomaterials-14-00486-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5e1c/10976111/b4ca3c70693c/nanomaterials-14-00486-g009.jpg

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本文引用的文献

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Nanomaterials (Basel). 2023 Jul 15;13(14):2077. doi: 10.3390/nano13142077.
2
1 × 4 Wavelength Demultiplexer C-Band Using Cascaded Multimode Interference on SiN Buried Waveguide Structure.基于氮化硅掩埋波导结构采用级联多模干涉的1×4波长解复用器C波段
Materials (Basel). 2022 Jul 21;15(14):5067. doi: 10.3390/ma15145067.
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A Three Demultiplexer C-Band Using Angled Multimode Interference in GaN-SiO Slot Waveguide Structures.
一种在氮化镓-二氧化硅槽型波导结构中利用倾斜多模干涉的三解复用器C波段。
Nanomaterials (Basel). 2020 Nov 25;10(12):2338. doi: 10.3390/nano10122338.
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