石墨烯/锰锌铁氧体/p型硅异质结的红外特性与太赫兹波调制

Infrared Properties and Terahertz Wave Modulation of Graphene/MnZn Ferrite/p-Si Heterojunctions.

作者信息

Zhang Dainan, Wei Miaoqing, Wen Tianlong, Liao Yulong, Jin Lichuan, Li Jie, Wen Qiye

机构信息

State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.

出版信息

Nanoscale Res Lett. 2017 Aug 8;12(1):482. doi: 10.1186/s11671-017-2250-2.

DOI:10.1186/s11671-017-2250-2

PMID:28791665

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5548700/

Abstract

MnZn ferrite thin films were deposited on p-Si substrate and used as the dielectric layer in the graphene field effect transistor for infrared and terahertz device applications. The conditions for MnZn ferrite thin film deposition were optimized before device fabrication. The infrared properties and terahertz wave modulation were studied at different gate voltage. The resistive and magnetic MnZn ferrite thin films are highly transparent for THz wave, which make it possible to magnetically modulate the transmitted THz wave via the large magnetoresistance of graphene monolayer.

摘要

锰锌铁氧体薄膜沉积在p型硅衬底上，并用作石墨烯场效应晶体管中的介电层，用于红外和太赫兹器件应用。在器件制造之前，对锰锌铁氧体薄膜的沉积条件进行了优化。研究了不同栅极电压下的红外特性和太赫兹波调制。电阻型和磁性锰锌铁氧体薄膜对太赫兹波具有高度透明性，这使得通过石墨烯单层的大磁阻对透射的太赫兹波进行磁调制成为可能。