Sun Guanghou, Yuan Lierong, Zhang Yi, Zhang Xuejin, Zhu Yongyuan
National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures and Key Laboratory of Modern Acoustics and School of Physics, Nanjing University, Nanjing, 210093, China.
School of Science, Jiujiang University, Jiujiang, 332005, China.
Sci Rep. 2017 Aug 15;7(1):8128. doi: 10.1038/s41598-017-07715-6.
We numerically investigated the effects of meta-atom interactions on the Fano resonance in all-dielectric metasurfaces by introducing alternately flipped asymmetric paired bars (APBs) and split asymmetric paired bars (SAPBs). With alternately flipped configurations, the Q-factor of the Fano resonance is significantly enhanced up to one order of magnitude, and the electric field is strengthened by more than twice. Abnormally, the Q-factor increases with gap size in the alternately flipped SAPBs. These are attributed to the destructive interaction among nearest-neighbor dipole resonators. The Q-factor of 10 and Raman enhancement factor of 10 in the gap can be realized with the alternately flipped SAPBs made of Si. Our study provides a way to improve performance of practical devices such as ultrasensitive sensors, nonlinear optics, and quantum emitters.
我们通过引入交替翻转的不对称配对条(APB)和分裂不对称配对条(SAPB),对全介质超表面中亚原子相互作用对法诺共振的影响进行了数值研究。在交替翻转配置下,法诺共振的品质因数显著提高,最高可达一个数量级,电场增强了两倍多。反常的是,在交替翻转的SAPB中,品质因数随间隙尺寸增加。这些归因于最近邻偶极子谐振器之间的相消相互作用。由硅制成的交替翻转SAPB可实现间隙中品质因数为10以及拉曼增强因子为10。我们的研究为提高诸如超灵敏传感器、非线性光学和量子发射器等实际器件的性能提供了一种方法。