Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic information, Huazhong University of Science and Technology , Wuhan, Hubei 430074, China.
ACS Nano. 2017 Nov 28;11(11):10704-10711. doi: 10.1021/acsnano.7b04810. Epub 2017 Oct 23.
All-dielectric metamaterials offer great flexibility for controlling light-matter interaction, owing to their strong electric and magnetic resonances with negligible loss at wavelengths above the material bandgap. Here, we propose an all-dielectric asymmetric metasurface structure exhibiting high quality factor and prominent Fano line shape. Over three-orders photoluminescence enhancement is demonstrated in the fabricated all-dielectric metasurface with record-high quality factor of 1011. We find this strong emission enhancement is attributed to the coherent Fano resonances, which originate from the destructive interferences of antisymmetric displacement currents in the asymmetric all-dielectric metasurface. Our observations show a promising approach to realize light emitters based on all-dielectric metasurfaces.
全介质超材料因其在材料带隙以上波长处具有几乎为零损耗的强电和磁共振,为控制光物质相互作用提供了极大的灵活性。在这里,我们提出了一种具有高品质因数和突出的 Fano 线型的全介质非对称超表面结构。在制作的全介质超表面中,实现了超过三个数量级的光致发光增强,其品质因数高达 1011。我们发现这种强发射增强归因于相干的 Fano 共振,这源于非对称全介质超表面中不对称位移电流的相消干涉。我们的观察结果表明,基于全介质超表面实现光源是一种很有前途的方法。