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通过与MOS接触进行类比捕获的AlGaN/AlN/GaN异质结中的相干隧穿。

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact.

作者信息

Baines Yannick, Buckley Julien, Biscarrat Jérôme, Garnier Gennie, Charles Matthew, Vandendaele William, Gillot Charlotte, Plissonnier Marc

机构信息

Univ. Grenoble Alpes, F-38000, Grenoble, France.

CEA, LETI, MINATEC Campus, F-38054, Grenoble, France.

出版信息

Sci Rep. 2017 Aug 15;7(1):8177. doi: 10.1038/s41598-017-08307-0.

DOI:10.1038/s41598-017-08307-0
PMID:28811615
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5557989/
Abstract

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher.

摘要

由于其宽带隙，III族氮化物材料可呈现从半导体类到介电类的多种行为。通过将金属/氮化铝镓/氮化铝/氮化镓二极管与金属氧化物半导体（MOS）接触进行类比，我们利用这种双重特性，展示了一条获取氮化物系统能带图的直接途径。然后，我们应用透明度计算来描述III族氮化物异质结二极管的正向传导机制，并证明它实现了一个隧道二极管，这与其常规的肖特基势垒二极管不同。热电子发射被排除，取而代之的是，相干电子隧穿机制能够解释在室温及更高温度下的输运现象。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/c35ecab67f8c/41598_2017_8307_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/9d16787656c2/41598_2017_8307_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/7b8b8610908d/41598_2017_8307_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/221032939a6d/41598_2017_8307_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/c3ed6fa1c4da/41598_2017_8307_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/7f7d1a84bc25/41598_2017_8307_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/18b084b206a9/41598_2017_8307_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/c35ecab67f8c/41598_2017_8307_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/9d16787656c2/41598_2017_8307_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/7b8b8610908d/41598_2017_8307_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/221032939a6d/41598_2017_8307_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/c3ed6fa1c4da/41598_2017_8307_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/7f7d1a84bc25/41598_2017_8307_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/18b084b206a9/41598_2017_8307_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/15fa/5557989/c35ecab67f8c/41598_2017_8307_Fig7_HTML.jpg

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