Mizumoto Tetsuya, Shoji Yuya, Takei Ryohei
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan.
Materials (Basel). 2012 May 24;5(5):985-1004. doi: 10.3390/ma5050985.
This paper reviews the direct bonding technique focusing on the waveguide optical isolator application. A surface activated direct bonding technique is a powerful tool to realize a tight contact between dissimilar materials. This technique has the potential advantage that dissimilar materials are bonded at low temperature, which enables one to avoid the issue associated with the difference in thermal expansion. Using this technique, a magneto-optic garnet is successfully bonded on silicon, III-V compound semiconductors and LiNbO₃. As an application of this technique, waveguide optical isolators are investigated including an interferometric waveguide optical isolator and a semileaky waveguide optical isolator. The interferometric waveguide optical isolator that uses nonreciprocal phase shift is applicable to a variety of waveguide platforms. The low refractive index of buried oxide layer in a silicon-on-insulator (SOI) waveguide enhances the magneto-optic phase shift, which contributes to the size reduction of the isolator. A semileaky waveguide optical isolator has the advantage of large fabrication-tolerance as well as a wide operation wavelength range.
本文综述了聚焦于波导光隔离器应用的直接键合技术。表面活化直接键合技术是实现不同材料紧密接触的有力工具。该技术具有潜在优势,即不同材料可在低温下键合,这使得能够避免与热膨胀差异相关的问题。利用该技术,磁光石榴石已成功键合在硅、III-V族化合物半导体和铌酸锂上。作为该技术的一项应用,对波导光隔离器进行了研究,包括干涉型波导光隔离器和半漏型波导光隔离器。利用非互易相移的干涉型波导光隔离器适用于多种波导平台。绝缘体上硅(SOI)波导中掩埋氧化物层的低折射率增强了磁光相移,这有助于减小隔离器的尺寸。半漏型波导光隔离器具有制造容差大以及工作波长范围宽的优点。