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Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding.

作者信息

Yokoi Hideki, Mizumoto Tetsuya, Shoji Yuya

机构信息

Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan.

出版信息

Appl Opt. 2003 Nov 20;42(33):6605-12. doi: 10.1364/ao.42.006605.

Abstract

Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding are proposed. The optical nonreciprocal devices are composed of a magneto-optic waveguide with a magnetic garnet/Si/SiO2 structure. Nonreciprocal characteristics are obtained by an evanescent field penetrating into the upper magnetic garnet cladding layer. Several kinds of the optical nonreciprocal device are investigated with the magneto-optic waveguide and designed at a wavelength of 1.55 microm. As a preliminary experiment, wafer bonding between Gd3Ga5O12 and Si was studied. Wafer bonding was successfully achieved with heat treatment at 220 degrees C in H2 ambient.

摘要

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