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原位原子成像揭示了通过硫耗尽导致悬浮的单层和少层二硫化钨的电击穿。

Electrical Breakdown of Suspended Mono- and Few-Layer Tungsten Disulfide via Sulfur Depletion Identified by in Situ Atomic Imaging.

机构信息

Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.

Physical & Computational Science Directorate, Pacific Northwest National Laboratory , Richland, Washington 99352, United States.

出版信息

ACS Nano. 2017 Sep 26;11(9):9435-9444. doi: 10.1021/acsnano.7b05080. Epub 2017 Aug 25.

DOI:10.1021/acsnano.7b05080
PMID:28829575
Abstract

The high-bias and breakdown behavior of suspended mono- and few-layer WS was explored by in situ aberration-corrected transmission electron microscopy. The suspended WS devices were found to undergo irreversible breakdown at sufficiently high biases due to vaporization of the WS. Simultaneous to the removal of WS was the accompanying formation of few-layer graphene decorated with W and WS nanoparticles, with the carbon source attributed to organic residues present on the WS surface. The breakdown of few-layer WS resulted in the formation of faceted S-depleted WS tendrils along the vaporization boundary, which were found to exhibit lattice contraction indicative of S depletion, alongside pure W phases incorporated into the structure, with the interfaces imaged at atomic resolution. The combination of observing the graphitization of the amorphous carbon surface residue, W nanoparticles, and S-depleted WS phases following the high-bias WS disintegration all indicate a thermal Joule heating breakdown mechanism over an avalanche process, with WS destruction promoted by preferential S emission. The observation of graphene formation and the role the thin amorphous carbon layer has in the prebreakdown behavior of the device demonstrate the importance of employing encapsulated heterostructure device architectures that exclude residues.

摘要

通过原位像差校正透射电子显微镜研究了悬浮的单原子层和少层 WS 的高偏压和击穿行为。发现由于 WS 的蒸发,悬浮的 WS 器件在足够高的偏压下会发生不可逆击穿。随着 WS 的去除,同时形成了少层石墨烯,上面装饰有 W 和 WS 纳米颗粒,碳源归因于 WS 表面存在的有机残留物。少层 WS 的击穿导致了沿着蒸发边界形成有面的 S 耗尽 WS 卷须,这些卷须被发现表现出晶格收缩,表明 S 耗尽,同时结构中还掺入了纯 W 相,界面以原子分辨率成像。观察到在高偏压 WS 分解后,非晶态碳表面残余物、W 纳米颗粒和 S 耗尽 WS 相的石墨化,以及在雪崩过程中热焦耳加热击穿机制,以及 S 优先发射促进 WS 破坏,所有这些都表明了采用排除残留物的封装异质结构器件架构的重要性。观察到石墨烯的形成以及薄非晶碳层在器件预击穿行为中的作用,证明了采用封装异质结构器件架构的重要性,这种架构可以排除残留物。

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