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双层 MoS 畴中具有取向依赖性的层间堆叠结构。

Orientation dependent interlayer stacking structure in bilayer MoS domains.

机构信息

Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK.

出版信息

Nanoscale. 2017 Sep 14;9(35):13060-13068. doi: 10.1039/c7nr03198j.

Abstract

We have studied the atomic structure of small secondary domains that nucleate on monolayer MoS grown by chemical vapour deposition (CVD), which form the basis of bilayer MoS. The small secondary bilayer domains have a faceted geometry with three-fold symmetry and adopt two distinct orientations with 60° rotation relative to an underlying monolayer MoS single crystal sheet. The two distinct orientations are associated with the 2H and 3R stacking configuration for bilayer MoS. Atomic resolution images have been recorded using annular dark field scanning transmission electron microscopy (ADF-STEM) that show the edge termination, lattice orientation and stacking sequence of the bilayer domains relative to the underlying monolayer MoS. These results provide important insights that bilayer MoS growth from 60° rotated small nuclei on the surface of monolayer MoS could lead to defective boundaries when merged to form larger continuous bilayer regions and that pure AA' or AB bilayer stacking may be challenging unless from a single seed.

摘要

我们研究了在化学气相沉积(CVD)生长的单层 MoS 上成核的小双层亚域的原子结构,这些亚域是双层 MoS 的基础。小双层亚域具有具有三重对称的有角几何形状,并采用两种与底层单层 MoS 单晶片相对旋转 60°的不同取向。这两种不同的取向与双层 MoS 的 2H 和 3R 堆叠构型有关。使用环形暗场扫描透射电子显微镜(ADF-STEM)记录了原子分辨率图像,显示了双层域相对于底层单层 MoS 的边缘终止、晶格取向和堆叠序列。这些结果提供了重要的见解,即当从表面上的 60°旋转小核生长双层 MoS 时,当合并形成更大的连续双层区域时,可能会导致有缺陷的边界,并且除非来自单个种子,否则纯 AA'或 AB 双层堆叠可能具有挑战性。

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