State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
Nanotechnology. 2017 Nov 3;28(44):445706. doi: 10.1088/1361-6528/aa887f. Epub 2017 Aug 25.
In this work, we prepared nanocrystalline (NC) Ti thin films with abundant stacking faults (SFs), which were created via partial dislocations emitted from grain boundaries and which were insensitive to grain sizes. By employing the nanoindentation test, we investigated the effects of SFs and grain sizes on the strength of NC Ti films at room temperature. The high density of SFs significantly strengthens NC Ti films, via dislocation-SF interactions associated with the reported highest Hall-Petch slope of ∼20 GPa nm, to an ultrahigh strength of ∼4.4 GPa, approaching ∼50% of its ideal strength.
在这项工作中，我们制备了具有丰富位错（SFs）的纳米晶（NC）Ti 薄膜，这些 SFs 是由晶界发射的部分位错产生的，且对晶粒尺寸不敏感。通过纳米压痕试验，我们研究了室温下 SFs 和晶粒尺寸对 NC Ti 薄膜强度的影响。高密度的 SFs 通过与报道的最高 Hall-Petch 斜率约为 20 GPa·nm 相关的位错-SF 相互作用，使 NC Ti 薄膜显著强化，达到超高强度约 4.4 GPa，接近其理想强度的 50%。
