Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, China.
Department of Physics, University of Texas at Austin , Austin, Texas 78712, United States.
Nano Lett. 2017 Sep 13;17(9):5508-5513. doi: 10.1021/acs.nanolett.7b02198. Epub 2017 Aug 30.
Piezoelectric and ferroelectric properties in the two-dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-InSe nanoflakes. The noncentrosymmetric R3m symmetry of the α-InSe samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-InSe nanoflakes with thicknesses down to ∼10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-InSe, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.
在纳米电子学、机电和光电应用中,人们非常希望获得二维(2D)极限下的压电和铁电性能。在这里,我们报告了范德华层状 α-InSe 纳米片中面外压电和铁电的首个实验证据。通过扫描透射电子显微镜、二次谐波产生和拉曼光谱测量,证实了 α-InSe 样品的非中心对称 R3m 对称性。通过压电力显微镜可以观察到具有相反极化的畴。单点极化实验表明,对于厚度低至约 10nm 的 α-InSe 纳米片,极化可能是可切换的。在两端器件中证明了压电器效应,其中应变引起的压电势可以调制肖特基势垒。我们对具有简单晶体结构的模型 2D 压电体和铁电体之一的极性 α-InSe 的研究表明,它在电子和光子应用中具有巨大的潜力。