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有机半导体-钙钛矿复合薄膜中的高光致发光量子产率

High Photoluminescence Quantum Yields in Organic Semiconductor-Perovskite Composite Thin Films.

作者信息

Longo Giulia, La-Placa Maria-Grazia, Sessolo Michele, Bolink Henk J

机构信息

Instituto de Ciencia Molecular, ICMol, Universidad de Valencia, Catedrático José Beltrán, 2, 46980, Paterna, Spain.

出版信息

ChemSusChem. 2017 Oct 9;10(19):3788-3793. doi: 10.1002/cssc.201701265. Epub 2017 Sep 19.

Abstract

One of the obstacles towards efficient radiative recombination in hybrid perovskites is a low exciton binding energy, typically in the orders of tens of meV. It has been shown that the use of electron-donor additives can lead to a substantial reduction of the non-radiative recombination in perovskite films. Herein, the approach using small molecules with semiconducting properties, which are candidates to be implemented in future optoelectronic devices, is presented. In particular, highly luminescent perovskite-organic semiconductor composite thin films have been developed, which can be processed from solution in a simple coating step. By tuning the relative concentration of methylammonium lead bromide (MAPbBr ) and 9,9spirobifluoren-2-yl-diphenyl-phosphine oxide (SPPO1), it is possible to achieve photoluminescent quantum yields (PLQYs) as high as 85 %. This is attributed to the dual functions of SPPO1 that limit the grain growth while passivating the perovskite surface. The electroluminescence of these materials was investigated by fabricating multilayer LEDs, where charge injection and transport was found to be severely hindered for the perovskite/SPPO1 material. This was alleviated by partially substituting SPPO1 with a hole-transporting material, 1,3-bis(N-carbazolyl)benzene (mCP), leading to bright electroluminescence. The potential of combining perovskite and organic semiconductors to prepare materials with improved properties opens new avenues for the preparation of simple lightemitting devices using perovskites as the emitter.

摘要

杂化钙钛矿中高效辐射复合的障碍之一是激子结合能较低,通常在几十毫电子伏特的量级。研究表明,使用电子供体添加剂可大幅降低钙钛矿薄膜中的非辐射复合。本文介绍了一种使用具有半导体性质的小分子的方法,这些小分子有望应用于未来的光电器件。具体而言,已开发出高发光的钙钛矿 - 有机半导体复合薄膜,可通过简单的溶液旋涂步骤制备。通过调节甲基溴化铅(MAPbBr )和9,9 - 螺二芴 - 2 - 基 - 二苯基 - 氧化膦(SPPO1)的相对浓度,可实现高达85%的光致发光量子产率(PLQY)。这归因于SPPO1的双重功能,它既能限制晶粒生长,又能钝化钙钛矿表面。通过制备多层发光二极管研究了这些材料的电致发光,结果发现钙钛矿/SPPO1材料的电荷注入和传输受到严重阻碍。通过用空穴传输材料1,3 - 双(N - 咔唑基)苯(mCP)部分替代SPPO1,这种情况得到缓解,从而实现了明亮的电致发光。将钙钛矿与有机半导体结合以制备性能更优材料的潜力,为使用钙钛矿作为发光体制备简单发光器件开辟了新途径。

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