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基于双曲型忆阻器的霍普菲尔德神经网络中不对称吸引子的共存行为

Coexisting Behaviors of Asymmetric Attractors in Hyperbolic-Type Memristor based Hopfield Neural Network.

作者信息

Bao Bocheng, Qian Hui, Xu Quan, Chen Mo, Wang Jiang, Yu Yajuan

机构信息

School of Information Science and Engineering, Changzhou UniversityChangzhou, China.

出版信息

Front Comput Neurosci. 2017 Aug 23;11:81. doi: 10.3389/fncom.2017.00081. eCollection 2017.

DOI:10.3389/fncom.2017.00081
PMID:28878644
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5572366/
Abstract

A new hyperbolic-type memristor emulator is presented and its frequency-dependent pinched hysteresis loops are analyzed by numerical simulations and confirmed by hardware experiments. Based on the emulator, a novel hyperbolic-type memristor based 3-neuron Hopfield neural network (HNN) is proposed, which is achieved through substituting one coupling-connection weight with a memristive synaptic weight. It is numerically shown that the memristive HNN has a dynamical transition from chaotic, to periodic, and further to stable point behaviors with the variations of the memristor inner parameter, implying the stabilization effect of the hyperbolic-type memristor on the chaotic HNN. Of particular interest, it should be highly stressed that for different memristor inner parameters, different coexisting behaviors of asymmetric attractors are emerged under different initial conditions, leading to the existence of multistable oscillation states in the memristive HNN. Furthermore, by using commercial discrete components, a nonlinear circuit is designed and PSPICE circuit simulations and hardware experiments are performed. The results simulated and captured from the realization circuit are consistent with numerical simulations, which well verify the facticity of coexisting asymmetric attractors' behaviors.

摘要

提出了一种新型双曲型忆阻器模拟器,并通过数值模拟分析了其频率依赖的 pinched 滞回环,并通过硬件实验进行了验证。基于该模拟器,提出了一种新型的基于双曲型忆阻器的 3 神经元 Hopfield 神经网络(HNN),它是通过用忆阻突触权重替代一个耦合连接权重来实现的。数值结果表明,随着忆阻器内部参数的变化,忆阻 HNN 具有从混沌到周期再到稳定点行为的动态转变,这意味着双曲型忆阻器对混沌 HNN 具有稳定作用。特别值得注意的是,应该强调的是,对于不同的忆阻器内部参数,在不同的初始条件下会出现不同的不对称吸引子共存行为,从而导致忆阻 HNN 中存在多稳态振荡状态。此外,利用商用分立元件设计了一个非线性电路,并进行了 PSPICE 电路仿真和硬件实验。从实现电路中模拟和捕获的结果与数值模拟一致,很好地验证了不对称吸引子共存行为的真实性。

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