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缺失的忆阻器被找到。

The missing memristor found.

作者信息

Strukov Dmitri B, Snider Gregory S, Stewart Duncan R, Williams R Stanley

机构信息

HP Labs, 1501 Page Mill Road, Palo Alto, California 94304, USA.

出版信息

Nature. 2008 May 1;453(7191):80-3. doi: 10.1038/nature06932.

Abstract

Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.

摘要

任何上过电子实验室课程的人都会熟悉基本的无源电路元件

电阻器、电容器和电感器。然而,1971年莱昂·蔡从对称性论证推断,应该存在第四个基本元件,他将其称为忆阻器(记忆电阻器的缩写)。尽管他表明这样一个元件具有许多有趣且有价值的电路特性,但到目前为止,还没有人提出有用的物理模型或忆阻器的示例。在这里,我们通过一个简单的分析示例表明,忆阻在纳米级系统中自然产生,在该系统中,固态电子和离子传输在外部偏置电压下耦合。这些结果为理解在许多涉及带电原子或分子物种运动的纳米级电子器件中观察到的广泛滞后电流 - 电压行为奠定了基础,特别是某些二氧化钛交叉点开关。

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