锰掺杂的锗和硅：实验现状综述
Mn-doped Ge and Si: A Review of the Experimental Status.
作者信息
Zhou Shengqiang, Schmidt Heidemarie
机构信息
Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China.
出版信息
Materials (Basel). 2010 Nov 26;3(12):5054-5082. doi: 10.3390/ma3125054.
Diluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their potential applications in spintronics and their striking new physical properties. So far Mn-doped III-V compound semiconductors such as GaMnAs are the most important and best understood ones, but they are ferromagnetic only at well below room temperature. An interesting alternative could be magnetic semiconductors based on elemental semiconductors, also owing to their compatibility with Si microelectronics. In the last decades, considerable amount of work has been devoted to fabricate Mn-doped Ge and Si FMS. In this article, the structural, magnetic and magneto-transport properties of Mn-doped Ge and Si will be reviewed.
稀磁半导体（FMS）因其在自旋电子学中的潜在应用及其引人注目的新物理特性而成为深入研究的焦点。到目前为止，诸如GaMnAs之类的锰掺杂III-V族化合物半导体是最重要且理解最透彻的，但它们仅在远低于室温的温度下才具有铁磁性。基于元素半导体的磁性半导体可能是一种有趣的替代方案，这也归因于它们与硅微电子学的兼容性。在过去几十年中，人们投入了大量工作来制备锰掺杂的锗和硅FMS。在本文中，将对锰掺杂的锗和硅的结构、磁性和磁输运特性进行综述。
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