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单层半导体中的特里昂谷相干性。

Trion Valley Coherence in Monolayer Semiconductors.

作者信息

Hao Kai, Xu Lixiang, Wu Fengcheng, Nagler Philipp, Tran Kha, Ma Xin, Schüller Christian, Korn Tobias, MacDonald Allan H, Moody Galan, Li Xiaoqin

机构信息

Department of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, TX 78712, USA.

Department of Physics, University of Regensburg, Regensburg, Germany 93040.

出版信息

2d Mater. 2017 Jun;4(2). doi: 10.1088/2053-1583/aa70f9. Epub 2017 May 22.

Abstract

The emerging field of valleytronics aims to exploit the valley pseudospin of electrons residing near Bloch band extrema as an information carrier. Recent experiments demonstrating optical generation and manipulation of exciton valley coherence (the superposition of electron-hole pairs at opposite valleys) in monolayer transition metal dichalcogenides (TMDs) provide a critical step towards control of this quantum degree of freedom. The charged exciton (trion) in TMDs is an intriguing alternative to the neutral exciton for control of valley pseudospin because of its long spontaneous recombination lifetime, its robust valley polarization, and its coupling to residual electronic spin. Trion valley coherence has however been unexplored due to experimental challenges in accessing it spectroscopically. In this work, we employ ultrafast two-dimensional coherent spectroscopy to resonantly generate and detect trion valley coherence in monolayer MoSe demonstrating that it persists for a few-hundred femtoseconds. We conclude that the underlying mechanisms limiting trion valley coherence are fundamentally different from those applicable to exciton valley coherence.

摘要

谷电子学这一新兴领域旨在利用位于布洛赫能带极值附近电子的谷赝自旋作为信息载体。最近在单层过渡金属二硫属化物(TMD)中实现激子谷相干(相反谷处电子 - 空穴对的叠加)的光生和操控的实验,是朝着控制这种量子自由度迈出的关键一步。TMD中的带电激子(三重子)因其长的自发复合寿命、稳健的谷极化以及与残余电子自旋的耦合,是控制谷赝自旋时中性激子的一个有趣替代物。然而,由于通过光谱学方法获取三重子谷相干存在实验挑战,其尚未得到探索。在这项工作中,我们采用超快二维相干光谱技术在单层MoSe₂中共振产生并检测三重子谷相干,证明其持续几百飞秒。我们得出结论,限制三重子谷相干的潜在机制与适用于激子谷相干的机制在根本上不同。

相似文献

1
Trion Valley Coherence in Monolayer Semiconductors.单层半导体中的特里昂谷相干性。
2d Mater. 2017 Jun;4(2). doi: 10.1088/2053-1583/aa70f9. Epub 2017 May 22.
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Optical generation of excitonic valley coherence in monolayer WSe2.单层 WSe2 中激子谷相干的光激发。
Nat Nanotechnol. 2013 Sep;8(9):634-8. doi: 10.1038/nnano.2013.151. Epub 2013 Aug 11.

本文引用的文献

1
Exciton Dynamics in Monolayer Transition Metal Dichalcogenides.单层过渡金属二硫属化物中的激子动力学
J Opt Soc Am B. 2016 Jul 1;33(7):C39-C49. doi: 10.1364/JOSAB.33.000C39. Epub 2016 Apr 19.
4
Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers.过渡金属二硫属化物单层中激子谷相干性的控制
Phys Rev Lett. 2016 Oct 28;117(18):187401. doi: 10.1103/PhysRevLett.117.187401. Epub 2016 Oct 25.
9
Electrical control of the valley Hall effect in bilayer MoS2 transistors.双层 MoS2 晶体管中谷霍尔效应的电控制。
Nat Nanotechnol. 2016 May;11(5):421-5. doi: 10.1038/nnano.2015.337. Epub 2016 Jan 25.

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