Research Laboratory of Electronics, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.
Department of Physics and Center for Ultrafast Imaging, University of Hamburg , Hamburg, Germany.
Nano Lett. 2017 Oct 11;17(10):6069-6076. doi: 10.1021/acs.nanolett.7b02495. Epub 2017 Sep 25.
Understanding plasmon-mediated electron emission and energy transfer on the nanometer length scale is critical to controlling light-matter interactions at nanoscale dimensions. In a high-resolution lithographic material, electron emission and energy transfer lead to chemical transformations. In this work, we employ such chemical transformations in two different high-resolution electron-beam lithography resists, poly(methyl methacrylate) (PMMA) and hydrogen silsesquioxane (HSQ), to map local electron emission and energy transfer with nanometer resolution from plasmonic nanoantennas excited by femtosecond laser pulses. We observe exposure of the electron-beam resists (both PMMA and HSQ) in regions on the surface of nanoantennas where the local field is significantly enhanced. Exposure in these regions is consistent with previously reported optical-field-controlled electron emission from plasmonic hotspots as well as earlier work on low-electron-energy scanning probe lithography. For HSQ, in addition to exposure in hotspots, we observe resist exposure at the centers of rod-shaped nanoantennas in addition to exposure in plasmonic hotspots. Optical field enhancement is minimized at the center of nanorods suggesting that exposure in these regions involves a different mechanism to that in plasmonic hotspots. Our simulations suggest that exposure at the center of nanorods results from the emission of hot electrons produced via plasmon decay in the nanorods. Overall, the results presented in this work provide a means to map both optical-field-controlled electron emission and hot-electron transfer from nanoparticles via chemical transformations produced locally in lithographic materials.
理解纳米尺度上的等离子体介导的电子发射和能量转移对于控制纳米尺度的光物质相互作用至关重要。在高分辨率光刻材料中,电子发射和能量转移会导致化学转化。在这项工作中,我们在两种不同的高分辨率电子束光刻胶(聚甲基丙烯酸甲酯(PMMA)和氢硅倍半氧烷(HSQ)中利用这些化学转化,通过飞秒激光脉冲激发的等离子体纳米天线以纳米分辨率绘制局部电子发射和能量转移。我们观察到电子束光刻胶(PMMA 和 HSQ)在纳米天线表面的局部场显著增强的区域发生曝光。这些区域的曝光与先前报道的等离子体热点光学场控制电子发射以及早期的低电子能扫描探针光刻工作一致。对于 HSQ,除了在热点处曝光外,我们还观察到在棒状纳米天线的中心也有光刻胶曝光,除了在等离子体热点处曝光外。纳米棒中心的光场增强最小化表明这些区域的曝光涉及与等离子体热点不同的机制。我们的模拟表明,纳米棒中心的曝光是由于纳米棒中等离子体衰减产生的热电子发射所致。总的来说,这项工作的结果提供了一种通过局部在光刻材料中产生的化学转化来绘制光学场控制的电子发射和来自纳米颗粒的热电子转移的方法。