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用于光学应用的蘸笔纳米位移光刻技术制备大面积金属纳米结构图案

Large-Area Patterning of Metal Nanostructures by Dip-Pen Nanodisplacement Lithography for Optical Applications.

作者信息

Chen Lina, Wei Xiaoling, Zhou Xuechang, Xie Zhuang, Li Kan, Ruan Qifeng, Chen Chaojian, Wang Jianfang, Mirkin Chad A, Zheng Zijian

机构信息

Laboratory for Advanced Interfacial Materials and Devices, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong SAR, China.

Department of Chemistry and International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA.

出版信息

Small. 2017 Nov;13(43). doi: 10.1002/smll.201702003. Epub 2017 Sep 20.

Abstract

Au nanostructures are remarkably important in a wide variety of fields for decades. The fabrication of Au nanostructures typically requires time-consuming and expensive electron-beam lithography (EBL) that operates in vacuum. To address this challenge, this paper reports the development of massive dip-pen nanodisplacement lithography (DNL) as a desktop fabrication tool, which allows high-throughput and rational design of arbitrary Au nanopatterns in ambient condition. Large-area (1 cm ) and uniform (<10% variation) Au nanostructures as small as 70 nm are readily fabricated, with a throughput 100-fold higher than that of conventional EBL. As a proof-of-concept of the applications in the opitcal field, we fabricate discrete Au nanorod arrays that show significant plasmonic resonance in the visible range, and interconnected Au nanomeshes that are used for transparent conductive electrode of solar cells.

摘要

几十年来,金纳米结构在众多领域都极为重要。金纳米结构的制造通常需要在真空中操作的耗时且昂贵的电子束光刻(EBL)技术。为应对这一挑战,本文报道了大规模蘸笔纳米位移光刻(DNL)技术的发展,它作为一种桌面制造工具,能够在环境条件下对任意金纳米图案进行高通量且合理的设计。易于制造出面积达1平方厘米且均匀性良好(变化小于10%)、小至70纳米的金纳米结构,其通量比传统电子束光刻技术高出100倍。作为光学领域应用的概念验证,我们制造出了在可见光范围内显示出显著等离子体共振的离散金纳米棒阵列,以及用于太阳能电池透明导电电极的互连金纳米网。

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