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Classic, liquid, and matrix-assisted dip-pen nanolithography for materials research.用于材料研究的经典、液体和基质辅助蘸笔纳米光刻技术。
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Capillary bridge rupture in dip-pen nanolithography.蘸笔纳米光刻中的毛细管桥破裂。
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Large-area molecular patterning with polymer pen lithography.聚合物笔光刻技术实现大面积分子图案化
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Desktop nanofabrication with massively multiplexed beam pen lithography.采用大规模复用光束笔光刻技术进行桌面级纳米制造。
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A cantilever-free approach to dot-matrix nanoprinting.无悬臂梁的点矩阵纳米印刷方法。
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Tuning the spring constant of cantilever-free tip arrays.无悬臂尖端阵列的弹簧常数调谐。
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用于聚合物笔光刻的硬质透明阵列

Hard Transparent Arrays for Polymer Pen Lithography.

作者信息

Hedrick James L, Brown Keith A, Kluender Edward J, Cabezas Maria D, Chen Peng-Cheng, Mirkin Chad A

机构信息

Department of Mechanical Engineering and Division of Materials Science & Engineering, Boston University , 110 Cummington Mall, Boston, Massachusetts 02215, United States.

出版信息

ACS Nano. 2016 Mar 22;10(3):3144-8. doi: 10.1021/acsnano.6b00528. Epub 2016 Mar 1.

DOI:10.1021/acsnano.6b00528
PMID:26928012
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4888776/
Abstract

Patterning nanoscale features across macroscopic areas is challenging due to the vast range of length scales that must be addressed. With polymer pen lithography, arrays of thousands of elastomeric pyramidal pens can be used to write features across centimeter-scales, but deformation of the soft pens limits resolution and minimum feature pitch, especially with polymeric inks. Here, we show that by coating polymer pen arrays with a ∼175 nm silica layer, the resulting hard transparent arrays exhibit a force-independent contact area that improves their patterning capability by reducing the minimum feature size (∼40 nm), minimum feature pitch (<200 nm for polymers), and pen to pen variation. With these new arrays, patterns with as many as 5.9 billion features in a 14.5 cm(2) area were written using a four hundred thousand pyramid pen array. Furthermore, a new method is demonstrated for patterning macroscopic feature size gradients that vary in feature diameter by a factor of 4. Ultimately, this form of polymer pen lithography allows for patterning with the resolution of dip-pen nanolithography across centimeter scales using simple and inexpensive pen arrays. The high resolution and density afforded by this technique position it as a broad-based discovery tool for the field of nanocombinatorics.

摘要

由于必须处理的长度尺度范围极广,在宏观区域上形成纳米级特征具有挑战性。使用聚合物笔光刻技术,数千个弹性体金字塔形笔的阵列可用于在厘米尺度上书写特征,但软笔的变形限制了分辨率和最小特征间距,尤其是使用聚合物墨水时。在此,我们表明,通过用约175纳米的二氧化硅层涂覆聚合物笔阵列,所得的坚硬透明阵列展现出与力无关的接触面积,通过减小最小特征尺寸(约40纳米)、最小特征间距(聚合物的小于200纳米)以及笔与笔之间的变化,提高了它们的图案化能力。使用这些新阵列,使用一个四十万金字塔形笔阵列在14.5平方厘米的区域内书写了多达59亿个特征的图案。此外,还展示了一种用于形成宏观特征尺寸梯度的新方法,其特征直径变化了4倍。最终,这种形式的聚合物笔光刻技术允许使用简单且廉价的笔阵列在厘米尺度上以蘸笔纳米光刻的分辨率进行图案化。该技术所提供的高分辨率和密度使其成为纳米组合化学领域的一种广泛的发现工具。