Lu Qiangsheng, Wu Minghui, Wu Di, Chang Cheng, Guo Yan-Ping, Zhou Chun-Sheng, Li Wei, Ma Xiao-Ming, Wang Gan, Zhao Li-Dong, Huang Li, Liu Chang, He Jiaqing
Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, China.
School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
Phys Rev Lett. 2017 Sep 15;119(11):116401. doi: 10.1103/PhysRevLett.119.116401. Epub 2017 Sep 13.
SnSe has emerged as an efficient thermoelectric material since a high value of the thermoelectric figure of merit (ZT) has been reported recently. Here we show with systematic angle resolved photoemission spectroscopy data that the low-lying electronic structures of undoped and hole-doped SnSe crystals exhibit noticeable temperature variation from 80 to 600 K. In particular, the hole effective masses for the two lowest lying valence band maxima are found to be very large and increase with decreasing temperature. Thermoelectric parameters derived from such hole-mass enhancement agree well with the transport values, indicating comprehensively a reduced impact of multivalley transport to the system's thermoelectric performance.
自从最近报道了具有高热电优值（ZT）以来，SnSe已成为一种高效的热电材料。在此，我们通过系统的角分辨光电子能谱数据表明，未掺杂和空穴掺杂的SnSe晶体的低能电子结构在80至600 K的温度范围内呈现出明显的温度变化。特别是，发现两个最低价带最大值处的空穴有效质量非常大，并且随着温度降低而增加。由这种空穴质量增强得出的热电参数与输运值吻合良好，全面表明多谷输运对系统热电性能的影响减小。
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