Faculty of Materials Science and Engineering, Kunming University of Science and Technology , Kunming 650093, China.
National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, Tsinghua University , Beijing 100084, China.
J Am Chem Soc. 2017 Jul 19;139(28):9714-9720. doi: 10.1021/jacs.7b05339. Epub 2017 Jul 5.
We report the high thermoelectric performance of p-type polycrystalline SnSe obtained by the synergistic tailoring of band structures and atomic-scale defect phonon scattering through (Na,K)-codoping. The energy offsets of multiple valence bands in SnSe are decreased after Na doping and further reduced by (Na,K)-codoping, resulting in an enhancement in the Seebeck coefficient and an increase in the power factor to 492 μW m K. The lattice thermal conductivity of polycrystalline SnSe is decreased by the introduction of effective phonon scattering centers, such as point defects and antiphase boundaries. The lattice thermal conductivity of the material is reduced to values as low as 0.29 W m K at 773 K, whereas ZT is increased from 0.3 for 1% Na-doped SnSe to 1.2 for 1% (Na,K)-codoped SnSe.
我们报告了通过(Na,K)共掺杂协同调整能带结构和原子级缺陷声子散射来获得的 p 型多晶 SnSe 的高热电性能。SnSe 中多个价带的能隙在 Na 掺杂后降低,并且通过(Na,K)共掺杂进一步降低,导致 Seebeck 系数增加,功率因子增加到 492 μW m K。多晶 SnSe 的晶格热导率通过引入有效的声子散射中心(如点缺陷和反相畴界)而降低。材料的晶格热导率在 773 K 时降低到低至 0.29 W m K,而 ZT 值从 1% Na 掺杂 SnSe 的 0.3 增加到 1%(Na,K)共掺杂 SnSe 的 1.2。