MESA+ Institute for Nanotechnology, University of Twente , P.O. Box 217, 7500AE Enschede, The Netherlands.
Solmates B.V. , Drienerlolaan 5, 7522NB Enschede, The Netherlands.
ACS Appl Mater Interfaces. 2017 Oct 18;9(41):35947-35957. doi: 10.1021/acsami.7b07428. Epub 2017 Oct 4.
Nanosheet CaNbO (CNOns) layers were deposited on ultralow expansion glass substrates by the Langmuir-Blodgett method to obtain preferential (001)-oriented growth of Pb(ZrTi)O (PZT) thin films using pulsed laser deposition (PLD) to enhance the ferroelectric and piezoelectric properties of the films. The PLD deposition temperature and repetition frequency used for the deposition of the PZT films were found to play a key role in the precise control of the microstructure and therefore of the ferroelectric and piezoelectric properties. A film deposited at a high repetition frequency has a columnar grain structure, which helps to increase the longitudinal piezoelectric coefficient (d). An enhanced d value of 356 pm V was obtained for 2-μm-thick PZT films on CNOns/glass substrates. This high value is ascribed to the preferential alignment of the crystalline [001] axis normal to the substrate surface and the open columnar structure. Large displacement actuators based on such PZT films grown on CNOns/glass substrates should be useful in smart X-ray optics applications.
通过 Langmuir-Blodgett 方法在超低膨胀玻璃衬底上沉积纳米片 CaNbO(CNOns)层,以通过脉冲激光沉积(PLD)获得优先(001)取向生长的 Pb(ZrTi)O(PZT)薄膜,从而增强薄膜的铁电和压电性能。发现 PLD 沉积温度和重复频率对 PZT 薄膜的沉积起着关键作用,可以精确控制微结构,从而控制铁电和压电性能。在高重复频率下沉积的薄膜具有柱状晶粒结构,有助于提高纵向压电系数(d)。在 CNOns/玻璃衬底上沉积的 2μm 厚的 PZT 薄膜获得了 356pmV 的增强 d 值。这个高值归因于晶体[001]轴垂直于衬底表面的择优取向和开放的柱状结构。基于在 CNOns/玻璃衬底上生长的此类 PZT 薄膜的大位移执行器应该在智能 X 射线光学应用中有用。