Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University , Shanghai 200092, China.
Nano Lett. 2017 Oct 11;17(10):6353-6359. doi: 10.1021/acs.nanolett.7b03140. Epub 2017 Oct 2.
The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.
肖特基结是电子学和光电子学中的重要单元。然而，随着器件的小型化，其性能会大大降低。电路的快速发展推动了对二维（2D）晶体的研究迅速增长，这可能会促使半导体行业取得突破。在这里，我们报告了一种基于堆叠的全二维层石墨烯-BP/h-BN/石墨烯（BP，黑磷；h-BN，六方氮化硼）的浮栅控制非易失性双极性肖特基结存储器，该结构设计为浮栅场效应肖特基势垒晶体管配置。通过控制施加到控制栅极的电压脉冲，该器件表现出双极性特性，并可调节为具有反向整流行为的石墨烯-p-BP 或石墨烯-n-BP 结。此外，该结还具有超过 10 年的良好存储性能，并且是可编程的。基于这些特性，我们进一步展示了该器件在双模式非易失性肖特基结存储器、存储器逆变器电路和逻辑整流器中的应用。
