School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.
Nanoscale. 2018 Feb 15;10(7):3148-3152. doi: 10.1039/c7nr08515j.
To meet the increasing requirements of minimizing circuits, the development of novel device architectures that use ultra-thin two-dimensional materials is encouraged. Here, we demonstrate a non-volatile black phosphorus (BP) PNP junction in a BP/h-BN/graphene heterostructure in which BP acts as a transport channel layer, hexagonal boron nitride (h-BN) serves as a tunnel barrier layer and graphene is the charge-trapping layer. The device architecture is designed such that only the middle part of the BP is aligned over the graphene flake, enabling the flexible tuning of the charge carriers in the BP over the graphene charge-trapping layer. Thus, the device exhibits the ability to work in two different operating modes (PNP and PPP). Each operating mode can be retained well and demonstrates non-volatile behavior, and each can be programmed by using the control-gate.
为了满足最小化电路的需求，鼓励开发使用超薄二维材料的新型器件架构。在这里，我们在 BP/h-BN/石墨烯异质结构中展示了一个非易失性黑磷（BP）PNP 结，其中 BP 作为传输通道层，六方氮化硼（h-BN）作为隧道势垒层，石墨烯是电荷俘获层。该器件结构设计为仅使 BP 的中间部分与石墨烯薄片对准，从而可以灵活地调整 BP 中跨越石墨烯电荷俘获层的电荷载流子。因此，该器件能够在两种不同的工作模式（PNP 和 PPP）下工作。每种工作模式都可以很好地保留，并表现出非易失性行为，并且每种模式都可以通过控制栅极进行编程。
