Notaros Jelena, Poulton Christopher V, Byrd Matthew J, Raval Manan, Watts Michael R
Opt Lett. 2017 Sep 1;42(17):3510-3513. doi: 10.1364/OL.42.003510.
Integrated optical phased arrays for generating quasi-Bessel beams are proposed and experimentally demonstrated in a CMOS-compatible platform. Owing to their elongated central beams, Bessel beams have applications in a range of fields, including multiparticle trapping and laser lithography. In this Letter, continuous Bessel theory is manipulated to formulate the phase and amplitude conditions necessary for generating free-space-propagating Bessel-Gauss beams using on-chip optical phased arrays. Discussion of the effects of select phased array parameters on the generated beam's figures of merit is included. A one-dimensional splitter-tree-based phased array architecture is modified to enable arbitrary passive control of the array's element phase and amplitude distributions. This architecture is used to experimentally demonstrate on-chip quasi-Bessel-beam generation with a ∼14 mm Bessel length and ∼30 μm power full width at half maximum.
提出了用于产生准贝塞尔光束的集成光学相控阵,并在与互补金属氧化物半导体(CMOS)兼容的平台上进行了实验演示。由于其中心光束细长,贝塞尔光束在包括多粒子捕获和激光光刻在内的一系列领域都有应用。在本信函中,对连续贝塞尔理论进行了处理,以制定使用片上光学相控阵产生自由空间传播的贝塞尔 - 高斯光束所需的相位和幅度条件。还讨论了所选相控阵参数对所产生光束品质因数的影响。对基于一维分束器树的相控阵架构进行了修改,以实现对阵列元件相位和幅度分布的任意无源控制。利用该架构通过实验演示了片上准贝塞尔光束的产生,其贝塞尔长度约为14毫米,半高全宽功率约为30微米。