Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
Department of Applied Physics, Hong Kong Polytechnic University , Hong Kong, China.
ACS Appl Mater Interfaces. 2017 Oct 25;9(42):37219-37226. doi: 10.1021/acsami.7b12605. Epub 2017 Oct 10.
We report a facile and cost-competitive nanopatterning route, using Ar ion beam etching through a monolayer polystyrene sphere (PS) array placed on a ferroelectric epitaxial thin film, to fabricate ordered ferroelectric nanodot arrays. Using this method, well-ordered BiFeO epitaxial nanodots, with tunable sizes from ∼100 to ∼900 nm in diameter, have been successfully synthesized. Interestingly, a plethora of exotic nanodomain structures, e.g., stripe domains, vortex and antivortex domains, and single domains, are observed in these nanodots. Moreover, this novel technique has been extended to produce Pb(Zr,Ti)O nanodots and multiferroic composite Co/BiFeO nanodots. These observations enable the creation of exotic domain structures and provide a wide range of application potentials for future nanoelectronic devices.
我们报告了一种简便且具有成本竞争力的纳米图案化方法,使用氩离子束刻蚀通过放置在铁电外延薄膜上的单层聚苯乙烯球(PS)阵列,来制造有序的铁电纳米点阵列。使用这种方法,已经成功合成了具有可调尺寸(直径约为 100 至 900nm)的有序 BiFeO 外延纳米点。有趣的是,在这些纳米点中观察到了多种奇异的纳米畴结构,例如条纹畴、涡旋和反涡旋畴以及单畴。此外,这项新技术已扩展到用于制备 Pb(Zr,Ti)O 纳米点和多铁复合 Co/BiFeO 纳米点。这些观察结果使奇异的畴结构得以实现,并为未来的纳米电子器件提供了广泛的应用潜力。