Tewari Sumit, Sabater Carlos, Kumar Manohar, Stahl Stefan, Crama Bert, van Ruitenbeek Jan M
Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 Leiden, The Netherlands.
Stahl Electronics, Hauptstrasse 15, 67582 Mettenhein, Germany.
Rev Sci Instrum. 2017 Sep;88(9):093903. doi: 10.1063/1.5003391.
Shot noise measurements on atomic and molecular junctions provide rich information about the quantum transport properties of the junctions and on the inelastic scattering events taking place in the process. Dissipation at the nanoscale, a problem of central interest in nano-electronics, can be studied in its most explicit and simplified form. Here, we describe a measurement technique that permits extending previous noise measurements to a much higher frequency range, and to much higher bias voltage range, while maintaining a high accuracy in noise and conductance. We also demonstrate the advantages of having access to the spectral information for diagnostics.
对原子和分子结进行的散粒噪声测量提供了有关结的量子输运特性以及该过程中发生的非弹性散射事件的丰富信息。纳米尺度的耗散是纳米电子学中一个核心关注的问题，可以以其最明确和简化的形式进行研究。在这里，我们描述了一种测量技术，该技术能够将先前的噪声测量扩展到更高的频率范围和更高的偏置电压范围，同时在噪声和电导方面保持高精度。我们还展示了获取光谱信息用于诊断的优势。
