Department of Physics, University of California San Diego , 9500 Gilman Drive, La Jolla, California 92093, United States.
National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, People's Republic of China.
Nano Lett. 2017 Nov 8;17(11):7080-7085. doi: 10.1021/acs.nanolett.7b03816. Epub 2017 Oct 12.
Domain walls separating regions of AB and BA interlayer stacking in bilayer graphene have attracted attention as novel examples of structural solitons, topological electronic boundaries, and nanoscale plasmonic scatterers. We show that strong coupling of domain walls to surface plasmons observed in infrared nanoimaging experiments is due to topological chiral modes confined to the walls. The optical transitions among these chiral modes and the band continua enhance the local conductivity, which leads to plasmon reflection by the domain walls. The imaging reveals two kinds of plasmonic standing-wave interference patterns, which we attribute to shear and tensile domain walls. We compute the electronic structure of both wall varieties and show that the tensile wall contains additional confined bands which produce a structure-specific contrast of the local conductivity, in agreement with the experiment. The coupling between the confined modes and the surface plasmon scattering unveiled in this work is expected to be common to other topological electronic boundaries found in van der Waals materials. This coupling provides a qualitatively new pathway toward controlling plasmons in nanostructures.
双层石墨烯中 AB 和 BA 层间堆叠区域之间的畴壁作为结构孤子、拓扑电子边界和纳米级等离子体散射体的新范例引起了人们的关注。我们表明,在红外纳米成像实验中观察到的畴壁与表面等离激元的强耦合是由于限制在畴壁中的拓扑手性模式所致。这些手性模式之间的光学跃迁和能带连续体增强了局部电导率,从而导致畴壁处的等离激元反射。成像揭示了两种等离子体驻波干涉模式,我们将其归因于剪切和拉伸畴壁。我们计算了这两种壁类型的电子结构,并表明拉伸壁中存在额外的受限能带,这导致局部电导率的结构特异性对比,与实验结果一致。这项工作中揭示的受限模式与表面等离激元散射之间的耦合预计在范德华材料中发现的其他拓扑电子边界中也很常见。这种耦合为控制纳米结构中的等离激元提供了一条全新的途径。