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层状二硫化钛单晶中电子与热输运的研究。

A study of electron and thermal transport in layered titanium disulphide single crystals.

作者信息

Suri Dhavala, Siva Vantari, Joshi Shalikram, Senapati Kartik, Sahoo P K, Varma Shikha, Patel R S

机构信息

Department of Physics, Birla Institute of Technology & Science Pilani-K K Birla Goa Campus, Zuarinagar, Goa 403726, India.

出版信息

J Phys Condens Matter. 2017 Dec 6;29(48):485708. doi: 10.1088/1361-648X/aa90c5.

Abstract

We present a detailed study of thermal and electrical transport behavior of single crystal titanium disulphide flakes, which belong to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements revealed a typical metal-like linear temperature dependence in the range of 85-285 K. Electrical transport measurements with in-plane current geometry exhibited a nearly T dependence of resistivity in the range of 42-300 K. However, transport measurements along the out-of-plane current geometry showed a transition in temperature dependence of resistivity from T to T beyond 200 K. Interestingly, Au ion-irradiated TiS samples showed a similar T dependence of resistivity beyond 200 K, even in the current-in-plane geometry. Micro-Raman measurements were performed to study the phonon modes in both pristine and ion-irradiated TiS crystals.

摘要

我们对单晶二硫化钛薄片的热输运和电输运行为进行了详细研究,该薄片属于二维过渡金属二硫属化物类材料。面内塞贝克效应测量表明,在85 - 285 K范围内呈现典型的类似金属的线性温度依赖性。采用面内电流几何结构的电输运测量显示,在42 - 300 K范围内电阻率几乎与T 相关。然而,沿面外电流几何结构的输运测量表明,在200 K以上,电阻率的温度依赖性从T 转变为T 。有趣的是,即使在面内电流几何结构中,金离子辐照的TiS样品在200 K以上也表现出类似的电阻率与T 的相关性。进行了显微拉曼测量以研究原始和离子辐照的TiS晶体中的声子模式。

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