Mikhailov Gennady M, Chernykh Anatoliy V, Fomin Lev A
Institute of Microelectronics Technology and High Purity Materials RAS, 142432 Chernogolovka, Russia.
Materials (Basel). 2017 Oct 4;10(10):1156. doi: 10.3390/ma10101156.
Growing of epitaxial FeMn/Fe/Mo/R-sapphire films was performed with a new configuration of two in-plane easy axes of Fe(001)-layer magnetization in which application of annealing in a magnetic field forms an unidirectional anisotropy. The microstructures made from these films exhibited an exchange bias 25-35 G along an exchange field generated at antiferromagnet/ferromagnet (AFM/FM) interface. Magnetic force microscopy (MFM) experiments supported by micromagnetic calculations and magneto-resistive measurements allowed interpretation of the magnetic states of the Fe layer in these microstructures. The magnetic states of the iron layer are influenced more by crystallographic anisotropy of the Fe-layer than by unidirectional exchange anisotropy.
采用一种新的配置生长外延FeMn/Fe/Mo/R-蓝宝石薄膜，该配置中Fe(001)层磁化的两个面内易轴在磁场中进行退火会形成单向各向异性。由这些薄膜制成的微结构在反铁磁体/铁磁体（AFM/FM）界面产生的交换场方向上表现出25 - 35 G的交换偏置。由微磁学计算和磁阻测量支持的磁力显微镜（MFM）实验能够解释这些微结构中铁层的磁状态。铁层的磁状态受Fe层晶体各向异性的影响比受单向交换各向异性的影响更大。
