Fan Ranran, Lu Fei, Li Kaikai
School of Information Science and Engineering, Shandong University, Jinan 250100, China.
Nanomaterials (Basel). 2017 Oct 11;7(10):311. doi: 10.3390/nano7100311.
Photoluminescence (PL) of Er and Ge co-doped ZnO films synthesized by radio frequency magnetron co-sputtering was investigated. X-ray diffraction (XRD) patterns showed that the annealing process at 400-800 °C led to the formation of nanocrystal (nc) Ge. Samples containing nc-Ge showed a strong visible PL with a peak at 582-593 nm, which was consistent with the calculated energy of the exciton of the ~5 nm-sized nc-Ge, according to the quantum confinement effect. The formation of nc-Ge could greatly enhance the 1.54 μm emission, and it is considered that the 1.54 μm PL enhancement may come from a joint effect of both the energy transfer from nc-Ge to Er and the local environment change of Er.
研究了通过射频磁控共溅射合成的铒（Er）和锗（Ge）共掺杂氧化锌薄膜的光致发光（PL）特性。X射线衍射（XRD）图谱表明，在400 - 800°C的退火过程导致了纳米晶体（nc）锗的形成。含有nc - Ge的样品在582 - 593 nm处显示出强烈的可见PL峰，根据量子限制效应，这与计算得到的约5 nm尺寸的nc - Ge激子能量一致。nc - Ge的形成可以极大地增强1.54μm的发射，并且认为1.54μm的PL增强可能来自nc - Ge到Er的能量转移以及Er的局部环境变化的共同作用。
