School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
Nanoscale. 2017 Oct 26;9(41):16073-16078. doi: 10.1039/c7nr04431c.
The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.
多功能自旋电子器件的发展需要同时控制电子的多个自由度，如电荷、自旋和轨道，特别是通过在一个特定器件中结合两种或更多种不同的物理机制，可以实现新的物理功能。在这里，我们报告了一种新型隧穿整流磁电阻（TRMR）的实现，其中 Co/CoO-ZnO/Co 磁性隧道结中的电荷相关整流和自旋相关隧穿磁电阻在不对称隧道势垒中得到了集成。此外，通过同时向器件施加直流和交流电流，在低温下，TRMR 的可调范围从-300%到 2200%。这项概念验证研究为电和磁对电荷和自旋的控制提供了一条新的途径，这可能适用于其他异质结，为未来的自旋电子学应用带来更迷人的新兴功能。
