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垂直石墨烯自旋阀中的自旋非依赖磁电阻效应。

Spin independent magnetoresistance effects in vertical graphene spin valves.

机构信息

Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB T6G 2V4, Canada.

出版信息

Nanotechnology. 2017 Dec 1;28(48):485202. doi: 10.1088/1361-6528/aa93ce.

Abstract

Vertical spin valve device configuration with multilayer graphene (MLG) as spacer has drawn significant attention in recent years because of its potential to produce large magnetoresistance (MR) effect due to perfect spin filtering. However, demonstration of this effect has remained elusive so far. Here we consider MLG vertical spin valve structures and show that they exhibit spin independent MR effects, which are orders of magnitude stronger than the spin dependent effects reported to date. These effects manifest within a moderate field range of 10 kG and depend on various factors such as hybridization near the top graphene surface, doping, defects and interlayer coupling. These effects highlight the rich spectrum of physical phenomena that manifest in such systems, which could be exploited in low to moderate magnetic field sensing applications.

摘要

近年来,由于多层石墨烯 (MLG) 作为间隔物的垂直自旋阀器件结构具有产生大磁电阻 (MR) 效应的潜力,因此引起了人们的极大关注。由于完美的自旋过滤,这种效应有望实现。在这里,我们考虑 MLG 垂直自旋阀结构,并表明它们表现出与自旋无关的 MR 效应,其强度比迄今为止报道的与自旋相关的效应高出几个数量级。这些效应在 10 kG 的中等磁场范围内表现出来,并取决于各种因素,如顶层石墨烯表面附近的杂化、掺杂、缺陷和层间耦合。这些效应突出了在这种系统中表现出来的丰富的物理现象谱,这些现象可用于低至中等磁场传感应用。

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